Presentation | 2013-12-13 Progress toward Low Threshold Operation of Membrane Laser for On-chip Optical Interconnection Takahiko SHINDO, Mitsuaki FUTAMI, Kyohei DOI, Takuo HIRATANI, Tomohiro AMEMIYA, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | As a substitute for the global wiring on the large scale integrated (LSI) circuits, we have proposed the membrane based on-chip optical integrated circuits. As a promising candidate for the light source of the on-chip optical interconnection, a semiconductor membrane laser, which consists of a high-index contrast waveguide, is expected to operate with ultra-low threshold current due to an enhanced modal gain. In this paper, we investigated the theoretical analysis of the membrane laser for on-chip optical interconnection. As a result, it was found that the membrane laser can totally meet the requirements for on-chip optical interconnection by adopting a core layer thickness of 150 nm. Furthermore, a low threshold current of 3.5 mA was achieved by introducing the lateral current injection structure to the membrane laser. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Semiconductor membrane laser / Lateral current injection / Strong optical confinement / Surface grating |
Paper # | LQE2013-130 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2013/12/6(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Progress toward Low Threshold Operation of Membrane Laser for On-chip Optical Interconnection |
Sub Title (in English) | |
Keyword(1) | Semiconductor membrane laser |
Keyword(2) | Lateral current injection |
Keyword(3) | Strong optical confinement |
Keyword(4) | Surface grating |
1st Author's Name | Takahiko SHINDO |
1st Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology() |
2nd Author's Name | Mitsuaki FUTAMI |
2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
3rd Author's Name | Kyohei DOI |
3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
4th Author's Name | Takuo HIRATANI |
4th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
5th Author's Name | Tomohiro AMEMIYA |
5th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
6th Author's Name | Nobuhiko NISHIYAMA |
6th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
7th Author's Name | Shigehisa ARAI |
7th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
Date | 2013-12-13 |
Paper # | LQE2013-130 |
Volume (vol) | vol.113 |
Number (no) | 352 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |