Presentation 2013-12-13
Progress toward Low Threshold Operation of Membrane Laser for On-chip Optical Interconnection
Takahiko SHINDO, Mitsuaki FUTAMI, Kyohei DOI, Takuo HIRATANI, Tomohiro AMEMIYA, Nobuhiko NISHIYAMA, Shigehisa ARAI,
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Abstract(in English) As a substitute for the global wiring on the large scale integrated (LSI) circuits, we have proposed the membrane based on-chip optical integrated circuits. As a promising candidate for the light source of the on-chip optical interconnection, a semiconductor membrane laser, which consists of a high-index contrast waveguide, is expected to operate with ultra-low threshold current due to an enhanced modal gain. In this paper, we investigated the theoretical analysis of the membrane laser for on-chip optical interconnection. As a result, it was found that the membrane laser can totally meet the requirements for on-chip optical interconnection by adopting a core layer thickness of 150 nm. Furthermore, a low threshold current of 3.5 mA was achieved by introducing the lateral current injection structure to the membrane laser.
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Keyword(in English) Semiconductor membrane laser / Lateral current injection / Strong optical confinement / Surface grating
Paper # LQE2013-130
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Committee LQE
Conference Date 2013/12/6(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Progress toward Low Threshold Operation of Membrane Laser for On-chip Optical Interconnection
Sub Title (in English)
Keyword(1) Semiconductor membrane laser
Keyword(2) Lateral current injection
Keyword(3) Strong optical confinement
Keyword(4) Surface grating
1st Author's Name Takahiko SHINDO
1st Author's Affiliation Quantum Nanoelectronics Research Center, Tokyo Institute of Technology()
2nd Author's Name Mitsuaki FUTAMI
2nd Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
3rd Author's Name Kyohei DOI
3rd Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
4th Author's Name Takuo HIRATANI
4th Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
5th Author's Name Tomohiro AMEMIYA
5th Author's Affiliation Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
6th Author's Name Nobuhiko NISHIYAMA
6th Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
7th Author's Name Shigehisa ARAI
7th Author's Affiliation Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
Date 2013-12-13
Paper # LQE2013-130
Volume (vol) vol.113
Number (no) 352
Page pp.pp.-
#Pages 6
Date of Issue