| Presentation | 2013-12-13 Investigation of InP/Si Hybrid Multi-functional Optical Device Structure Junichi SUZUKI, Keita FUKUDA, Yusuke HAYASHI, JoonHyun KANG, Yuki ATSUMI, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | III-V/Si hybrid integration with direct bonding is an attractive way to realize one-chip optical router. In this paper, design considerations of III-V/Si hybrid optical amplifier, III-V/Si taper coupling, and tunable laser composing an optical router are reported. In respect to hybrid SOA, the idea of controlling the optical confinement factor by changing Si waveguide width was proposed and revealed by using finite element method. Meanwhile, a structure for highly efficient taper coupling between the hybrid SOA and Si waveguide was investigated by using eigenmode expansion method, and the coupling efficiency over 99% was obtained. Lastly, a ring-resonant-reflector structure enabling a SMSR of larger than 30dB with a tunable range of 35nm was designed for III-V/Si hybrid tunable laser. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Plasma activated bonding / Hybrid laser / Silicon photonics |
| Paper # | LQE2013-129 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2013/12/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Investigation of InP/Si Hybrid Multi-functional Optical Device Structure |
| Sub Title (in English) | |
| Keyword(1) | Plasma activated bonding |
| Keyword(2) | Hybrid laser |
| Keyword(3) | Silicon photonics |
| 1st Author's Name | Junichi SUZUKI |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology() |
| 2nd Author's Name | Keita FUKUDA |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 3rd Author's Name | Yusuke HAYASHI |
| 3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 4th Author's Name | JoonHyun KANG |
| 4th Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 5th Author's Name | Yuki ATSUMI |
| 5th Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 6th Author's Name | Nobuhiko NISHIYAMA |
| 6th Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 7th Author's Name | Shigehisa ARAI |
| 7th Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology:Quantum Nanoelectronics Research Center Tokyo Institute of Technology |
| Date | 2013-12-13 |
| Paper # | LQE2013-129 |
| Volume (vol) | vol.113 |
| Number (no) | 352 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |