Presentation 2013-12-20
Characteristics and analysis of germanium waveguide photodiode under high voltage driving
Kotaro Takeda, Tatsuro Hiraki, Tai Tsuchizawa, Hidetaka Nishi, Rai Kou, Hiroshi Fukuda, Tsuyoshi Yamamoto, Yasuhiko Ishikawa, Kazumi Wada, Koji Yamada,
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Abstract(in English) We demonstrate a responsivity of germanium photodiode (GePD) with a silicon waveguide in the C and L-band under high-voltage reverse bias driving. At a bias of 15V, the germanium photodiode exhibits responsivity of over 1.14 A/W in the entire C- and L-bands. The high responsivity in the L-band is due to Franz-Keldysh (F-K) effect and avalanche effect. We proved that the high responsivity under high bias driving is due to both effects by numerical calculation. For accurate calculation, a change in thickness of depression layer in germanium mesa with bias voltage was considered. Calculation results considering the contributions of both effects show good agreement with measurement results. Considering contributions of both effects to minimum detection limit, optimization for dark current and electric field applied to Ge is discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Germanium photodiode / Franz-Keldysh effect / Avalanche effect
Paper # OPE2013-140
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Committee OPE
Conference Date 2013/12/13(1days)
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Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characteristics and analysis of germanium waveguide photodiode under high voltage driving
Sub Title (in English)
Keyword(1) Germanium photodiode
Keyword(2) Franz-Keldysh effect
Keyword(3) Avalanche effect
1st Author's Name Kotaro Takeda
1st Author's Affiliation NTT Nanophotonics Center:NTT Microsystem Integration Laboratories()
2nd Author's Name Tatsuro Hiraki
2nd Author's Affiliation NTT Nanophotonics Center:NTT Microsystem Integration Laboratories
3rd Author's Name Tai Tsuchizawa
3rd Author's Affiliation NTT Nanophotonics Center:NTT Microsystem Integration Laboratories
4th Author's Name Hidetaka Nishi
4th Author's Affiliation NTT Nanophotonics Center:NTT Microsystem Integration Laboratories
5th Author's Name Rai Kou
5th Author's Affiliation NTT Nanophotonics Center:NTT Microsystem Integration Laboratories
6th Author's Name Hiroshi Fukuda
6th Author's Affiliation NTT Microsystem Integration Laboratories
7th Author's Name Tsuyoshi Yamamoto
7th Author's Affiliation NTT Microsystem Integration Laboratories
8th Author's Name Yasuhiko Ishikawa
8th Author's Affiliation Department of Materials Engineering, University of Tokyo
9th Author's Name Kazumi Wada
9th Author's Affiliation Department of Materials Engineering, University of Tokyo
10th Author's Name Koji Yamada
10th Author's Affiliation NTT Nanophotonics Center:NTT Microsystem Integration Laboratories
Date 2013-12-20
Paper # OPE2013-140
Volume (vol) vol.113
Number (no) 370
Page pp.pp.-
#Pages 6
Date of Issue