Presentation | 2013-12-20 Characteristics and analysis of germanium waveguide photodiode under high voltage driving Kotaro Takeda, Tatsuro Hiraki, Tai Tsuchizawa, Hidetaka Nishi, Rai Kou, Hiroshi Fukuda, Tsuyoshi Yamamoto, Yasuhiko Ishikawa, Kazumi Wada, Koji Yamada, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We demonstrate a responsivity of germanium photodiode (GePD) with a silicon waveguide in the C and L-band under high-voltage reverse bias driving. At a bias of 15V, the germanium photodiode exhibits responsivity of over 1.14 A/W in the entire C- and L-bands. The high responsivity in the L-band is due to Franz-Keldysh (F-K) effect and avalanche effect. We proved that the high responsivity under high bias driving is due to both effects by numerical calculation. For accurate calculation, a change in thickness of depression layer in germanium mesa with bias voltage was considered. Calculation results considering the contributions of both effects show good agreement with measurement results. Considering contributions of both effects to minimum detection limit, optimization for dark current and electric field applied to Ge is discussed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Germanium photodiode / Franz-Keldysh effect / Avalanche effect |
Paper # | OPE2013-140 |
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Conference Information | |
Committee | OPE |
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Conference Date | 2013/12/13(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Optoelectronics (OPE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characteristics and analysis of germanium waveguide photodiode under high voltage driving |
Sub Title (in English) | |
Keyword(1) | Germanium photodiode |
Keyword(2) | Franz-Keldysh effect |
Keyword(3) | Avalanche effect |
1st Author's Name | Kotaro Takeda |
1st Author's Affiliation | NTT Nanophotonics Center:NTT Microsystem Integration Laboratories() |
2nd Author's Name | Tatsuro Hiraki |
2nd Author's Affiliation | NTT Nanophotonics Center:NTT Microsystem Integration Laboratories |
3rd Author's Name | Tai Tsuchizawa |
3rd Author's Affiliation | NTT Nanophotonics Center:NTT Microsystem Integration Laboratories |
4th Author's Name | Hidetaka Nishi |
4th Author's Affiliation | NTT Nanophotonics Center:NTT Microsystem Integration Laboratories |
5th Author's Name | Rai Kou |
5th Author's Affiliation | NTT Nanophotonics Center:NTT Microsystem Integration Laboratories |
6th Author's Name | Hiroshi Fukuda |
6th Author's Affiliation | NTT Microsystem Integration Laboratories |
7th Author's Name | Tsuyoshi Yamamoto |
7th Author's Affiliation | NTT Microsystem Integration Laboratories |
8th Author's Name | Yasuhiko Ishikawa |
8th Author's Affiliation | Department of Materials Engineering, University of Tokyo |
9th Author's Name | Kazumi Wada |
9th Author's Affiliation | Department of Materials Engineering, University of Tokyo |
10th Author's Name | Koji Yamada |
10th Author's Affiliation | NTT Nanophotonics Center:NTT Microsystem Integration Laboratories |
Date | 2013-12-20 |
Paper # | OPE2013-140 |
Volume (vol) | vol.113 |
Number (no) | 370 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |