Presentation 2014-05-27
MOSFET Nonlinear Capacitance Effect on EER Transmitter with Class-E Amplifier
Xiuqin WEI, Tomoharu NAGASHIMA, Hiroo SEKIYA, Tadashi SUETSUGU,
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Abstract(in English) This paper presents analytical expressions of the MOSFET-parasitic-capacitance effects on the output envelope of the EER transmitter, taking into account the MOSFET linear gate-to-drain and nonlinear drain-to-source parasitic capacitances in the class-E amplifier. The analysis is useful to predict the behavior of the EER transmitter using the class-E amplifier. It is shown that the envelope of the output voltage is not in proportion to the dc-supply voltage due to the MOSFET-parasitic-capacitance effects. Additionally, the driving voltage waveform affects the output-voltage amplitude and phase shift between the driving voltage and the output voltage.
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Keyword(in English) EER transmitter / class-E amplifier / parasitic capacitance / nonlinearity
Paper # NLP2014-13
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Committee NLP
Conference Date 2014/5/19(1days)
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Registration To Nonlinear Problems (NLP)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) MOSFET Nonlinear Capacitance Effect on EER Transmitter with Class-E Amplifier
Sub Title (in English)
Keyword(1) EER transmitter
Keyword(2) class-E amplifier
Keyword(3) parasitic capacitance
Keyword(4) nonlinearity
1st Author's Name Xiuqin WEI
1st Author's Affiliation Dept of Electronics Engineering and Computer Science, Fukuoka University()
2nd Author's Name Tomoharu NAGASHIMA
2nd Author's Affiliation Graduate School of Advanced Integration Science, Chiba University
3rd Author's Name Hiroo SEKIYA
3rd Author's Affiliation Graduate School of Advanced Integration Science, Chiba University
4th Author's Name Tadashi SUETSUGU
4th Author's Affiliation Dept of Electronics Engineering and Computer Science, Fukuoka University
Date 2014-05-27
Paper # NLP2014-13
Volume (vol) vol.114
Number (no) 55
Page pp.pp.-
#Pages 5
Date of Issue