| Presentation | 2013-12-13 The Effect of Solvent Substitution on Memory Characteristics of Cu/ HfO_2/Pt Conducting-Bridge Random Access Memory (CB-RAM) Sho HASEGAWA, Yutarou ENOMOTO, Naonobu KATADA, Toshiyuki ITO, Satoru KISHIDA, Kentaro KINOSHITA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 'pore engineering', which is a method for controlling the memory performance of conducting-bridge random access memory (CB-RAM) by regarding the polycrystalline oxide memory layer as a nanoporous body, is proposed. This method is intended to control the resistive switching properties by controlling the size, physical and chemical properties of the pores, and by providing an appropriate solvent to pores. In this paper, we confirmed that both forming and set voltages were decreased by providing solvents (water and ion liquids of [bmim][TFSA] and [P_<1ME>][TFSA]) to the HfO_2 layer of Cu/HfO_2/Pt structures. In addition, the relationship of I_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CB-RAM / water / HfO_2 / ion migration / nanopore |
| Paper # | SDM2013-129 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2013/12/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Effect of Solvent Substitution on Memory Characteristics of Cu/ HfO_2/Pt Conducting-Bridge Random Access Memory (CB-RAM) |
| Sub Title (in English) | |
| Keyword(1) | CB-RAM |
| Keyword(2) | water |
| Keyword(3) | HfO_2 |
| Keyword(4) | ion migration |
| Keyword(5) | nanopore |
| 1st Author's Name | Sho HASEGAWA |
| 1st Author's Affiliation | Tottori University Department of Enginiaring() |
| 2nd Author's Name | Yutarou ENOMOTO |
| 2nd Author's Affiliation | Tottori University Department of Enginiaring |
| 3rd Author's Name | Naonobu KATADA |
| 3rd Author's Affiliation | Tottori University Department of Enginiaring |
| 4th Author's Name | Toshiyuki ITO |
| 4th Author's Affiliation | Tottori University Department of Enginiaring |
| 5th Author's Name | Satoru KISHIDA |
| 5th Author's Affiliation | Tottori University Department of Enginiaring:Tottori University Electronic Display Research Center (TEDREC) |
| 6th Author's Name | Kentaro KINOSHITA |
| 6th Author's Affiliation | Tottori University Department of Enginiaring:Tottori University Electronic Display Research Center (TEDREC) |
| Date | 2013-12-13 |
| Paper # | SDM2013-129 |
| Volume (vol) | vol.113 |
| Number (no) | 351 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |