Presentation 2014-05-29
Photo-response of photochemically deposited SnO_2 thin films
Takanori Hounoki, Masaya Ichimura,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) SnO_2 is an oxide semiconductor with a band gap of 3.6-3.8 eV and is regarded as promising for gas sensers and UV detectors. We characterized photo sensitivity of SnO_2 thin films deposited by photochemical deposition (PCD) method. The 0.1μm-thick films were deposited on glass substrates and then annealed in N_2 atmosphere. When irradiated with light of the AM1.5 spectrum for 1 hour, the resistance decreased by two order of magnitude for 1mW/cm^2 irradiation and three orders of magnitude for 100 mW/cm^2 irradiation. After the light was turned off, the resistance increased slowly and approached to the initial value after several hours. Almost the same photo response was observed even if the UV range was cut by a filter. Thus the films show high sensitivity even for below-band gap photo irradiation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SnO_2 / photochemical deposition / photo conductance
Paper # ED2014-42,CPM2014-25,SDM2014-40
Date of Issue

Conference Information
Committee ED
Conference Date 2014/5/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Photo-response of photochemically deposited SnO_2 thin films
Sub Title (in English)
Keyword(1) SnO_2
Keyword(2) photochemical deposition
Keyword(3) photo conductance
1st Author's Name Takanori Hounoki
1st Author's Affiliation Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology()
2nd Author's Name Masaya Ichimura
2nd Author's Affiliation Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
Date 2014-05-29
Paper # ED2014-42,CPM2014-25,SDM2014-40
Volume (vol) vol.114
Number (no) 56
Page pp.pp.-
#Pages 5
Date of Issue