Presentation 2013-11-29
Development of Connected Pillar AlN Buffer for AlGaN deep-UV LEDs
Shiro TOYODA, Hideki HIRAYAMA, Norihiko KAMATA,
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Abstract(in English) A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increasing efficiency of AlGaN based deep-ultraviolet (DUV) LEDs, because of improving internal quantum efficiency (IQE) due to reduced threading-dislocation density (TDD), and light-extraction efficiency (LEE). In this study, we demonstrated the fabrication of connected-pillar AlN structure buffer on patterned-sapphire substrates (PSS) by using an 'NH_3 pulsed flow multi-layer growth' method and an epitaxial lateral overgrowth (ELO).
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Keyword(in English) DUV-LED / MOCVD / AlN / AlGaN / Connected pillar
Paper # ED2013-85,CPM2013-144,LQE2013-120
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Conference Information
Committee LQE
Conference Date 2013/11/21(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of Connected Pillar AlN Buffer for AlGaN deep-UV LEDs
Sub Title (in English)
Keyword(1) DUV-LED
Keyword(2) MOCVD
Keyword(3) AlN
Keyword(4) AlGaN
Keyword(5) Connected pillar
1st Author's Name Shiro TOYODA
1st Author's Affiliation RIKEN:Saitama University()
2nd Author's Name Hideki HIRAYAMA
2nd Author's Affiliation RIKEN
3rd Author's Name Norihiko KAMATA
3rd Author's Affiliation Saitama University
Date 2013-11-29
Paper # ED2013-85,CPM2013-144,LQE2013-120
Volume (vol) vol.113
Number (no) 331
Page pp.pp.-
#Pages 6
Date of Issue