Presentation 2013-11-29
OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures
Takanori ARAI, Ryuta WAKAMATSU, Dong-gun LEE, Atsushi KOIZUMI, Yasufumi FUJIWARA,
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Abstract(in English) We have grown Eu-doped GaN/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor-phase epitaxy, and investigated their luminescence properties. The satellite peaks owing to GaN/AlGaN multiple quantum well structures were observed in X-ray diffraction patterns for the MQW:Eu samples. The photoluminescence (PL) spectra of the MQW:Eu samples exhibited enhancement of Eu luminescence peak intensity and broadening of the peak width compared with Eu-doped GaN (GaN:Eu) grown using the same condition. The integrated PL intensity in MQW:Eu was four times higher than that in GaN:Eu. Photoluminescence excitation (PLE) spectra of MQW:Eu indicated that the enhanced Eu luminescence originated from Eu^<3+> ions in the GaN well layers.
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Keyword(in English) Eu-doped GaN / Quantum well / OMVPE / PL
Paper # ED2013-77,CPM2013-136,LQE2013-112
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Committee LQE
Conference Date 2013/11/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures
Sub Title (in English)
Keyword(1) Eu-doped GaN
Keyword(2) Quantum well
Keyword(3) OMVPE
Keyword(4) PL
1st Author's Name Takanori ARAI
1st Author's Affiliation Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University()
2nd Author's Name Ryuta WAKAMATSU
2nd Author's Affiliation Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
3rd Author's Name Dong-gun LEE
3rd Author's Affiliation Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
4th Author's Name Atsushi KOIZUMI
4th Author's Affiliation Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
5th Author's Name Yasufumi FUJIWARA
5th Author's Affiliation Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
Date 2013-11-29
Paper # ED2013-77,CPM2013-136,LQE2013-112
Volume (vol) vol.113
Number (no) 331
Page pp.pp.-
#Pages 4
Date of Issue