Presentation 2013-11-28
Study on C doping in GaN and AlGaN by MOVPE
Yuya WAKASUGI, Yoshio HONDA, Hiroshi AMANO,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We grew Mg/C co-doped GaN and AlGaN by MOVPE for identifying the C level in GaN and AlGaN. We measured electrical and optical properties by Hall effect measurement and cathodeluminescence (CL) measurement. Hole concentration in GaN increased with increase of C concentration at low C doping level, although that in AlGaN decreased with increase of C_2H_2 flow rate. All the samples show similar CL with peak wavelength of about 440nm. We also grew Mg/C delta co-doped GaN. Delta doping is found to be effective for realizing higher hole concentration than the conventional one.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / AlGaN / C / Mg / doping / MOVPE
Paper # ED2013-74,CPM2013-133,LQE2013-109
Date of Issue

Conference Information
Committee LQE
Conference Date 2013/11/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on C doping in GaN and AlGaN by MOVPE
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlGaN
Keyword(3) C
Keyword(4) Mg
Keyword(5) doping
Keyword(6) MOVPE
1st Author's Name Yuya WAKASUGI
1st Author's Affiliation Graduate School of Engineering, Nagoya University()
2nd Author's Name Yoshio HONDA
2nd Author's Affiliation Graduate School of Engineering, Nagoya University
3rd Author's Name Hiroshi AMANO
3rd Author's Affiliation Graduate School of Engineering, Nagoya University:Akasaki Research Center, Nagoya University
Date 2013-11-28
Paper # ED2013-74,CPM2013-133,LQE2013-109
Volume (vol) vol.113
Number (no) 331
Page pp.pp.-
#Pages 4
Date of Issue