Presentation 2013-11-28
Quantum Efficiency of p-GaN with NEA surface for high brightness electron source
Takuya Maekawa, Yoshio Honda, Hiroshi Amano, Tomohiro Nishitani,
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Abstract(in English) We report the lifetime and high brightness condition of the NEA GaN surface for the high brightness and durability of the electron source using the p-type semiconductor surface with the negative electron affinity. After making the NEA surface on the p-GaN substrate in the ultra-high vacuum, we measured the wavelength and lifetime dependents of the quantum efficiency. We confirmed that the p-GaN substrate has over twenty times as long lifetime as p-GaAs substrate and it has the higher durability performance by the result. In addition, we knew that the quantum efficiency below the bandgap energy is decreased especially with deterioration of the surface function. By these results, NEA photocathode electron source using the p-GaN has the high durability and their deteriorated surface was suitable for becoming single color of the electron beam.
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Keyword(in English) GaN / GaAs / Photo-cathode / NEA / electron beam source
Paper # ED2013-73,CPM2013-132,LQE2013-108
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Committee LQE
Conference Date 2013/11/21(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Quantum Efficiency of p-GaN with NEA surface for high brightness electron source
Sub Title (in English)
Keyword(1) GaN
Keyword(2) GaAs
Keyword(3) Photo-cathode
Keyword(4) NEA
Keyword(5) electron beam source
1st Author's Name Takuya Maekawa
1st Author's Affiliation Graduate School of Engineering, Nagoya University()
2nd Author's Name Yoshio Honda
2nd Author's Affiliation Graduate School of Engineering, Nagoya University
3rd Author's Name Hiroshi Amano
3rd Author's Affiliation Graduate School of Engineering, Nagoya University:Akasaki Research Center, Nagoya University
4th Author's Name Tomohiro Nishitani
4th Author's Affiliation Synchrotron radiation Research center, Nagoya University
Date 2013-11-28
Paper # ED2013-73,CPM2013-132,LQE2013-108
Volume (vol) vol.113
Number (no) 331
Page pp.pp.-
#Pages 4
Date of Issue