Presentation 2013-11-28
Investigation on the optimum MQW structure for InGaN/GaN solar cells
Noriyuki WATANABE, Manabu MITSUHARA, Haruki YOKOYAMA, Jianbo LIANG, Naoteru SHIGEKAWA,
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Abstract(in English) We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. We reported that higher short circuit current was obtained in solar cells with thinner GaN barrier layer and with more numbers of InGaN/GaN period. This tendency can be explained by the hypothesis that the transportation of photo-induced carriers is determined by the diffusion process with some diffusion length. Based on this model, we find that the MQW structure with thinner barrier layer are advantageous for higher short circuit current.
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Keyword(in English) solar cells / InGaN/GaN MQW / short circuit current / diffusion process of photo-induced carrier
Paper # ED2013-70,CPM2013-129,LQE2013-105
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Committee LQE
Conference Date 2013/11/21(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation on the optimum MQW structure for InGaN/GaN solar cells
Sub Title (in English)
Keyword(1) solar cells
Keyword(2) InGaN/GaN MQW
Keyword(3) short circuit current
Keyword(4) diffusion process of photo-induced carrier
1st Author's Name Noriyuki WATANABE
1st Author's Affiliation NTT Photonics Laboratories, NTT corporation()
2nd Author's Name Manabu MITSUHARA
2nd Author's Affiliation NTT Photonics Laboratories, NTT corporation
3rd Author's Name Haruki YOKOYAMA
3rd Author's Affiliation NTT Photonics Laboratories, NTT corporation
4th Author's Name Jianbo LIANG
4th Author's Affiliation Graduate School of Engineering, Osaka City University
5th Author's Name Naoteru SHIGEKAWA
5th Author's Affiliation Graduate School of Engineering, Osaka City University
Date 2013-11-28
Paper # ED2013-70,CPM2013-129,LQE2013-105
Volume (vol) vol.113
Number (no) 331
Page pp.pp.-
#Pages 4
Date of Issue