Presentation	2013-11-28 Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding Jianbo LIANG, Shota NiSHIDA, Masashi MORIMOTO, Naoteru SHIGEGAWA,
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Abstract(in English)	The electrical properties of pn junctions with various semiconductor materials with different doping concentrations, InGaP/(100)Si n-on-p,InGaP/(100)Si p-on-n and InGaP/(111)Si p-on-n double junction cells fabricated by using surface activated bonding (SAB) were investigated. The I-V characteristics of pn junctions composed of semiconductor junction layers of high impurity concentration showed ohmic-like properties. We obtained the lowest interfacial resistance (0.13Ω・cm^2) in the p^+-GaAs/n^<++>-Si junction, the interface resistance decrease with increasing impurity concentration. Its value was considered to be sufficiently low on the solar cell application. The open circuit voltage (V_) was almost equal to those of the respective subcells in the two-junction solar cells, furthermore, the conversion efficiency (11.1%) was larger than those of the subsells in the InGaP/(100)Si n-on-p double junction cells. These results suggest that SAB method is suitable for fabrication of high efficiency multi junction cells on the Si substrate.
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Keyword(in English)	surface activated bonding / interface resistance / power loss / InGaP/Si tandem solar cells / conversion efficiency / open voltage / series resistance
Paper #	ED2013-69,CPM2013-128,LQE2013-104
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Committee	LQE
Conference Date	2013/11/21(1days)
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Registration To	Lasers and Quantum Electronics (LQE)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding
Sub Title (in English)
Keyword(1)	surface activated bonding
Keyword(2)	interface resistance
Keyword(3)	power loss
Keyword(4)	InGaP/Si tandem solar cells
Keyword(5)	conversion efficiency
Keyword(6)	open voltage
Keyword(7)	series resistance
1st Author's Name	Jianbo LIANG
1st Author's Affiliation	Graduate School of Engineering, Osaka City University()
2nd Author's Name	Shota NiSHIDA
2nd Author's Affiliation	Graduate School of Engineering, Osaka City University
3rd Author's Name	Masashi MORIMOTO
3rd Author's Affiliation	Graduate School of Engineering, Osaka City University
4th Author's Name	Naoteru SHIGEGAWA
4th Author's Affiliation	Graduate School of Engineering, Osaka City University
Date	2013-11-28
Paper #	ED2013-69,CPM2013-128,LQE2013-104
Volume (vol)	vol.113
Number (no)	331
Page	pp.pp.-
#Pages	4
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