Presentation 2014-04-11
Fabrication of poly-Si TFT with low-temperature process using BLDA
Kiyoharu Shimoda, Kouya Sugihara, Kimihiko Imura, Tatsuya Okada, Takashi Noguchi,
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Abstract(in English) Poly-Si TFTs by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT without ion-implantation was fabricated with ultra-low temperature process below 400℃ using BLDA. Ti was adopted for source and drain. High performance TFTs formed by low cost process are expected on plastic and on flexible sheet using BLDA.
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Keyword(in English) TFT / Low temperature / Silicon / Crystallization / Laser annealing
Paper # SDM2014-14,OME2014-14
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Conference Information
Committee OME
Conference Date 2014/4/3(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of poly-Si TFT with low-temperature process using BLDA
Sub Title (in English)
Keyword(1) TFT
Keyword(2) Low temperature
Keyword(3) Silicon
Keyword(4) Crystallization
Keyword(5) Laser annealing
1st Author's Name Kiyoharu Shimoda
1st Author's Affiliation Faculty of Engineering, University of the Ryukyus()
2nd Author's Name Kouya Sugihara
2nd Author's Affiliation Faculty of Engineering, University of the Ryukyus
3rd Author's Name Kimihiko Imura
3rd Author's Affiliation Faculty of Engineering, University of the Ryukyus
4th Author's Name Tatsuya Okada
4th Author's Affiliation Faculty of Engineering, University of the Ryukyus
5th Author's Name Takashi Noguchi
5th Author's Affiliation Faculty of Engineering, University of the Ryukyus
Date 2014-04-11
Paper # SDM2014-14,OME2014-14
Volume (vol) vol.114
Number (no) 2
Page pp.pp.-
#Pages 3
Date of Issue