Presentation 2014-04-11
Study on Crystal Growth of Polycrystalline Si at Low Temperature : For High Performance Flexible Display
Naoya KAWAMOTO, Kazuyuki TADATOMO, Akira HEYA, Naoto MATSUO,
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Abstract(in English) Polycrystalline (poly-) Si film by laser annealing is attractive for thin film transistor on a polymer substrate as well as on a glass substrate. We have proposed a visible-laser-induced lateral crystallization (VILC) for decreasing process temperature. Visible laser is irradiated onto a polycrystalline Si film before or after ultraviolet laser irradiation. Lateral growth is enhanced by visible laser heating at the grain boundary since the absorbance of the grain boundary is larger than that of the in-grain.
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Keyword(in English) polycrystalline Si / laser annealing / secondary grain growth / solid phase crystallization
Paper # SDM2014-12,OME2014-12
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Committee OME
Conference Date 2014/4/3(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on Crystal Growth of Polycrystalline Si at Low Temperature : For High Performance Flexible Display
Sub Title (in English)
Keyword(1) polycrystalline Si
Keyword(2) laser annealing
Keyword(3) secondary grain growth
Keyword(4) solid phase crystallization
1st Author's Name Naoya KAWAMOTO
1st Author's Affiliation Yamaguchi University()
2nd Author's Name Kazuyuki TADATOMO
2nd Author's Affiliation Yamaguchi University
3rd Author's Name Akira HEYA
3rd Author's Affiliation University of Hyogo
4th Author's Name Naoto MATSUO
4th Author's Affiliation University of Hyogo
Date 2014-04-11
Paper # SDM2014-12,OME2014-12
Volume (vol) vol.114
Number (no) 2
Page pp.pp.-
#Pages 4
Date of Issue