Presentation 2014-04-10
Al-induced low-temperature crystallization for large-grained Ge(111) thin films on amorphous insulators
Kaoru TOKO, Takashi SUEMASU,
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Abstract(in English) We introduce Al-induced crystallization (AIC), a unique technique controlling the crystal orientation of polycrystalline Ge thin films on amorphous insulating substrates. The crystal quality of the Al-induced crystallized Ge layer is very sensitive to the growth parameters (e.g. thickness). By optimizing these parameters, we fabricated a 99% (111)-oriented Ge layer (50 nm) with large grains (~100 μm) on a SiO_2 substrate. Moreover, we promoted the reaction between Al and Ge based on the growth mechanism, and then achieved a (111)-oriented Ge layer at as low as 180 ℃. This achievement holds promise for fabricating Ge-based flexible devices on inexpensive plastic substrates.
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Keyword(in English) Germanium / Thin film / Metal-induced crystallization / Crystal orientation control
Paper # SDM2014-6,OME2014-6
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Committee OME
Conference Date 2014/4/3(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Al-induced low-temperature crystallization for large-grained Ge(111) thin films on amorphous insulators
Sub Title (in English)
Keyword(1) Germanium
Keyword(2) Thin film
Keyword(3) Metal-induced crystallization
Keyword(4) Crystal orientation control
1st Author's Name Kaoru TOKO
1st Author's Affiliation University of Tsukuba()
2nd Author's Name Takashi SUEMASU
2nd Author's Affiliation University of Tsukuba
Date 2014-04-10
Paper # SDM2014-6,OME2014-6
Volume (vol) vol.114
Number (no) 2
Page pp.pp.-
#Pages 3
Date of Issue