Presentation | 2014-04-10 Al-induced low-temperature crystallization for large-grained Ge(111) thin films on amorphous insulators Kaoru TOKO, Takashi SUEMASU, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We introduce Al-induced crystallization (AIC), a unique technique controlling the crystal orientation of polycrystalline Ge thin films on amorphous insulating substrates. The crystal quality of the Al-induced crystallized Ge layer is very sensitive to the growth parameters (e.g. thickness). By optimizing these parameters, we fabricated a 99% (111)-oriented Ge layer (50 nm) with large grains (~100 μm) on a SiO_2 substrate. Moreover, we promoted the reaction between Al and Ge based on the growth mechanism, and then achieved a (111)-oriented Ge layer at as low as 180 ℃. This achievement holds promise for fabricating Ge-based flexible devices on inexpensive plastic substrates. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Germanium / Thin film / Metal-induced crystallization / Crystal orientation control |
Paper # | SDM2014-6,OME2014-6 |
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Committee | OME |
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Conference Date | 2014/4/3(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Al-induced low-temperature crystallization for large-grained Ge(111) thin films on amorphous insulators |
Sub Title (in English) | |
Keyword(1) | Germanium |
Keyword(2) | Thin film |
Keyword(3) | Metal-induced crystallization |
Keyword(4) | Crystal orientation control |
1st Author's Name | Kaoru TOKO |
1st Author's Affiliation | University of Tsukuba() |
2nd Author's Name | Takashi SUEMASU |
2nd Author's Affiliation | University of Tsukuba |
Date | 2014-04-10 |
Paper # | SDM2014-6,OME2014-6 |
Volume (vol) | vol.114 |
Number (no) | 2 |
Page | pp.pp.- |
#Pages | 3 |
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