Presentation 2014-04-10
Formation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth
Jong-Hyeok PARK, Masanobu MIYAO, Taizoh SADOH,
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Abstract(in English) Low-temperature (≤250℃) formation technique of orientation-controlled large-grain Ge thin films on insulator is desirable for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique combined with inter-diffusion-control and interface-energy-modulation techniques has been investigated. Consequently, selective formation of (100) or (111)-oriented large-grain (>20 μm) Ge crystals on insulator have been realized. Moreover, formation of (111)-oriented large-grain Ge crystals directly on plastic substrates is demonstrated. This technique facilitates realization of future flexible electronics.
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Keyword(in English) flexible electronics / quasi-single-crystal Ge / Au-induced layer-exchange growth
Paper # SDM2014-4,OME2014-4
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Committee OME
Conference Date 2014/4/3(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth
Sub Title (in English)
Keyword(1) flexible electronics
Keyword(2) quasi-single-crystal Ge
Keyword(3) Au-induced layer-exchange growth
1st Author's Name Jong-Hyeok PARK
1st Author's Affiliation Department of Electronics, Kyushu University()
2nd Author's Name Masanobu MIYAO
2nd Author's Affiliation Department of Electronics, Kyushu University
3rd Author's Name Taizoh SADOH
3rd Author's Affiliation Department of Electronics, Kyushu University
Date 2014-04-10
Paper # SDM2014-4,OME2014-4
Volume (vol) vol.114
Number (no) 2
Page pp.pp.-
#Pages 4
Date of Issue