Presentation | 2014-04-10 Formation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth Jong-Hyeok PARK, Masanobu MIYAO, Taizoh SADOH, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Low-temperature (≤250℃) formation technique of orientation-controlled large-grain Ge thin films on insulator is desirable for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique combined with inter-diffusion-control and interface-energy-modulation techniques has been investigated. Consequently, selective formation of (100) or (111)-oriented large-grain (>20 μm) Ge crystals on insulator have been realized. Moreover, formation of (111)-oriented large-grain Ge crystals directly on plastic substrates is demonstrated. This technique facilitates realization of future flexible electronics. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | flexible electronics / quasi-single-crystal Ge / Au-induced layer-exchange growth |
Paper # | SDM2014-4,OME2014-4 |
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Committee | OME |
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Conference Date | 2014/4/3(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Formation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth |
Sub Title (in English) | |
Keyword(1) | flexible electronics |
Keyword(2) | quasi-single-crystal Ge |
Keyword(3) | Au-induced layer-exchange growth |
1st Author's Name | Jong-Hyeok PARK |
1st Author's Affiliation | Department of Electronics, Kyushu University() |
2nd Author's Name | Masanobu MIYAO |
2nd Author's Affiliation | Department of Electronics, Kyushu University |
3rd Author's Name | Taizoh SADOH |
3rd Author's Affiliation | Department of Electronics, Kyushu University |
Date | 2014-04-10 |
Paper # | SDM2014-4,OME2014-4 |
Volume (vol) | vol.114 |
Number (no) | 2 |
Page | pp.pp.- |
#Pages | 4 |
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