Presentation 2014-04-10
Single-crystalline Silicon Layer Transfer Technique Utilizing Meniscus Force and Its Application to Device Fabrication
Seiichiro Higashi, Kohei Sakaike, Muneki Akazawa, Shogo Nakamura,
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Abstract(in English) An SOI layer with midair cavity formed by wet etching of BOX layer has been transferred to a counter substrate by meniscus force generated by pure water. Thin-film transistors (TFTs) fabricated on glass (Corning Eagle200) and plastic (PET) substrates based on the proposed layer transfer technique show very high field effect mobilities of 1226 and 609 cm^2V^<-1>s^<-1>, respectively, and these results show the proposed method is quite promising as a low temperature device fabrication technique.
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Keyword(in English) Meniscus force / Layer transfer / Flexible / Thin film transistor
Paper # SDM2014-3,OME2014-3
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Committee OME
Conference Date 2014/4/3(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Single-crystalline Silicon Layer Transfer Technique Utilizing Meniscus Force and Its Application to Device Fabrication
Sub Title (in English)
Keyword(1) Meniscus force
Keyword(2) Layer transfer
Keyword(3) Flexible
Keyword(4) Thin film transistor
1st Author's Name Seiichiro Higashi
1st Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University()
2nd Author's Name Kohei Sakaike
2nd Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University
3rd Author's Name Muneki Akazawa
3rd Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University
4th Author's Name Shogo Nakamura
4th Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University
Date 2014-04-10
Paper # SDM2014-3,OME2014-3
Volume (vol) vol.114
Number (no) 2
Page pp.pp.-
#Pages 6
Date of Issue