Presentation	2014-03-05 60-GHz-Band Class-F Amplifier with InGaAs HEMT Masashi OYAMA, Toshiki KISHI, Yohtaro UMEDA, Tomohiro YOSHIDA, Tetsuya SUEMITSU,
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Abstract(in English)	Recent years the traffic of the overall wireless-communication system increases rapidly as mobile communication devices spread. So wireless-communication using millimeter wave bands attracts attentions to reduce the impact of shortage of frequency resources. InGaAs HEMTs have high maximum oscillation frequency (f_), so it will be efficient to use it for power amplifiers used at high frequency. In this paper, we designed class-F power amplifier with InGaAs HEMT. First, we obtained both small and large-signal model of InGaAs HEMT with its S-parameter and DC characteristics. Second, we designed a class-F amplifier with the InGaAs HEMT model. In the design, we considered both of parasitic capacitances that an InGaAs HEMT includes and that appear between interconnections of metals when it is implemented in IC. The designed amplifier shows power-added efficiency of 52.4% at 60GHz.
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Keyword(in English)	Millimeter Wave / InGaAs HEMT / Class F / PAE
Paper #	MW2013-220
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Committee	MW
Conference Date	2014/2/25(1days)
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Paper Information
Registration To	Microwaves (MW)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	60-GHz-Band Class-F Amplifier with InGaAs HEMT
Sub Title (in English)
Keyword(1)	Millimeter Wave
Keyword(2)	InGaAs HEMT
Keyword(3)	Class F
Keyword(4)	PAE
1st Author's Name	Masashi OYAMA
1st Author's Affiliation	Department of Electrical Engineering, Graduate School of Science and Technology, Tokyo University of Science()
2nd Author's Name	Toshiki KISHI
2nd Author's Affiliation	Department of Electrical Engineering, Graduate School of Science and Technology, Tokyo University of Science
3rd Author's Name	Yohtaro UMEDA
3rd Author's Affiliation	Department of Electrical Engineering, Graduate School of Science and Technology, Tokyo University of Science
4th Author's Name	Tomohiro YOSHIDA
4th Author's Affiliation	Research Institute of Electrical Communication, Tohoku University
5th Author's Name	Tetsuya SUEMITSU
5th Author's Affiliation	Research Institute of Electrical Communication, Tohoku University
Date	2014-03-05
Paper #	MW2013-220
Volume (vol)	vol.113
Number (no)	460
Page	pp.pp.-
#Pages	6
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