Presentation 2014-03-05
An X-Band GaN High-Power Amplifier with Input and Output 2^-harmonic Terminating Networks
H. UCHIDA, M. HANGAI, K. YAMANAKA, H. FUKUMOTO, KOYAMA H. /, Y. KAMO,
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Abstract(in English) To boost the efficiency of GaN high-power amplifier (HPA), we have employed both the input and output 2nd-harmonic terminating networks in an X-band GaN HPA with a short gate-length GaN-HEMT. The input 2nd-harmonic terminating network consists of an inter-digital capacitor and a transmission line, and the output one consists of an open-circuited stub and a transmission line. With the aid of these networks, an output power of 23-25 W and a power-added efficiency of 56 % in 8 % relative bandwidth. As the authors' knowledge, it is among the top-level performance in the category of X-band GaN HPA.
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Keyword(in English) High-power amplifier / gallium nitride (GaN) / harmonic termination / X-band
Paper # MW2013-219
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Committee MW
Conference Date 2014/2/25(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) An X-Band GaN High-Power Amplifier with Input and Output 2^-harmonic Terminating Networks
Sub Title (in English)
Keyword(1) High-power amplifier
Keyword(2) gallium nitride (GaN)
Keyword(3) harmonic termination
Keyword(4) X-band
1st Author's Name H. UCHIDA
1st Author's Affiliation Mitsubishi Electric Corporation, Information Technology R&D Center()
2nd Author's Name M. HANGAI
2nd Author's Affiliation Mitsubishi Electric Corporation, Information Technology R&D Center
3rd Author's Name K. YAMANAKA
3rd Author's Affiliation Mitsubishi Electric Corporation, Information Technology R&D Center
4th Author's Name H. FUKUMOTO
4th Author's Affiliation Mitsubishi Electric Corporation, Information Technology R&D Center
5th Author's Name KOYAMA H. /
5th Author's Affiliation / Mitsubishi Electric Corporation, Information Technology R&D Center
6th Author's Name Y. KAMO
6th Author's Affiliation Mitsubishi Electric Corporation, Information Technology R&D Center
Date 2014-03-05
Paper # MW2013-219
Volume (vol) vol.113
Number (no) 460
Page pp.pp.-
#Pages 4
Date of Issue