| Presentation | 2014-03-05 Si/GaAs Hybrid Power Amplifier Modules for WCDMA Handset Terminals Teruyuki SHIMURA, Kazuya YAMAMOTO, Hiroaki SEKI, Morishige HIEDA, Yoshihito HIRANO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single-band (SB) and multiband (MB) power amplifier modules (PAM) are demonstrated for WCDMA handsets applications. The PAMs feature bulk Si-CMOS and GaAs-HBT hybrid architecture for pursuing low cost while maintaining high efficiency and high- and low-power mode (HPM and LPM) function. In the PAMs, the CMOS die accommodates a driver stage for the HPM, two power stages for the LPM, and several RF switches in addition to their-related bias and switch control functions. A power stage and its related bias block for the HPM are integrated on the GaAs-based HBT die, and a band select switch used in the MB PAM is implemented using a GaAs-based HEMT process. Measurements under a condition of WCDMA modulation (3GPP, R99) and 3.4-V power supplies show that the SB PAM operating in 880-915MHz can deliver a 28.5dBm output power (Pout), a 44% power-added efficiency (PAE), and a -39dBc 5-MHz-offset adjacent channel leakage power ratio (ACLR) in the HPM. In the LPM, a PAE as high as 20% is obtained at 17dBm of Pout. The MB PAM operating in the bands of 824-915MHz and 1850-1980MHz also achieves high PAE of 35～40% in the HPM and 14～15% PAE in the LPM while keeping ACLR of less than -37dBc. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | power amplifiers / WCDMA terminals / HBT / CMOS / HEMT / broadband matching |
| Paper # | MW2013-218 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2014/2/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Si/GaAs Hybrid Power Amplifier Modules for WCDMA Handset Terminals |
| Sub Title (in English) | |
| Keyword(1) | power amplifiers |
| Keyword(2) | WCDMA terminals |
| Keyword(3) | HBT |
| Keyword(4) | CMOS |
| Keyword(5) | HEMT |
| Keyword(6) | broadband matching |
| 1st Author's Name | Teruyuki SHIMURA |
| 1st Author's Affiliation | Mitsubishi Electric Corporation, High Frequency and Optical Device Works() |
| 2nd Author's Name | Kazuya YAMAMOTO |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation, High Frequency and Optical Device Works |
| 3rd Author's Name | Hiroaki SEKI |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation, High Frequency and Optical Device Works |
| 4th Author's Name | Morishige HIEDA |
| 4th Author's Affiliation | Mitsubishi Electric Corporation, Information Technology R&D Center |
| 5th Author's Name | Yoshihito HIRANO |
| 5th Author's Affiliation | Mitsubishi Electric Corporation, High Frequency and Optical Device Works |
| Date | 2014-03-05 |
| Paper # | MW2013-218 |
| Volume (vol) | vol.113 |
| Number (no) | 460 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |