| Presentation | 2014-02-27 Suppressing the Recombination Rate on DSSC by Forming Blocking Layer R. Winantyo, V.M. Mohan, R.M.G. Rajapakse, K. Murakami, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | One of the disadvantages of ZnO in the application for DSSCs is a high recombination rate. In general, the suppression of electron recombination leads to an increase in the short circuit current. The same current in the present study suggests that the injected electrons from dye into ZnO may recombine with the electrolyte through the ZnO seed layer. We are trying to form a dense ZnO or TiO_2 layer at the bottom of nanorods. The energy conversion efficiency could be improved by inserting a layer between the ZnO and FTO, which will substantially suppress the recombination rate |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DSSC / Zinc Oxide / Nanorods / blocking layer |
| Paper # | ED2013-139,SDM2013-154 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2014/2/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Suppressing the Recombination Rate on DSSC by Forming Blocking Layer |
| Sub Title (in English) | |
| Keyword(1) | DSSC |
| Keyword(2) | Zinc Oxide |
| Keyword(3) | Nanorods |
| Keyword(4) | blocking layer |
| 1st Author's Name | R. Winantyo |
| 1st Author's Affiliation | Graduate School of Science and Technology, Shizuoka University() |
| 2nd Author's Name | V.M. Mohan |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | R.M.G. Rajapakse |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University:Dept. Chemistry, University of Peradeniya |
| 4th Author's Name | K. Murakami |
| 4th Author's Affiliation | Graduate School of Engineering, Shizuoka University |
| Date | 2014-02-27 |
| Paper # | ED2013-139,SDM2013-154 |
| Volume (vol) | vol.113 |
| Number (no) | 450 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |