| Presentation | 2014-02-27 Operating characteristics of partial-resonant push-pull converter employing SiC-BGSIT Tatsuhiro FUNATSU, Tetsuro TANAKA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | SiC-BGSIT (Buried Gate Static Induction Transistor) has the advantage Si-MOSFET of high breakdown voltage and low on state resistance. and moreover, SiC-BGSIT has high switching speed equal to that of Si-MOSFET. We report results are dynamics and steady-state characteristics of partial-resonant push-pull converter employing normally-on SiC-BGSIT and employing Si-MOSFET. We compared SiC-BGSIT with Si-MOSFET. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / BGSIT / voltage-resonant / partial-resonant / push-pull converter |
| Paper # | EE2013-57,CPM2013-158 |
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| Conference Information | |
| Committee | EE |
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| Conference Date | 2014/2/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Energy Engineering in Electronics and Communications (EE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Operating characteristics of partial-resonant push-pull converter employing SiC-BGSIT |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | BGSIT |
| Keyword(3) | voltage-resonant |
| Keyword(4) | partial-resonant |
| Keyword(5) | push-pull converter |
| 1st Author's Name | Tatsuhiro FUNATSU |
| 1st Author's Affiliation | Kagoshima University() |
| 2nd Author's Name | Tetsuro TANAKA |
| 2nd Author's Affiliation | Kagoshima University |
| Date | 2014-02-27 |
| Paper # | EE2013-57,CPM2013-158 |
| Volume (vol) | vol.113 |
| Number (no) | 444 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |