Presentation 2014-01-24
Luminescence property of hexagonal boron nitride films grown by high-temperature CVD
Naoki UMEHARA, Iori KUWAHARA, Hey-Young LEE, Tetsuya KOUNO, Hiroko KOMINAMI, Yoichiro NAKANISHI, Kazuhiko HARA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Hexagonal boron nitride (h-BN) thin films have been grown on a c-plane sapphire substrate by atmospheric-pressure chemical vapor deposition using BCl3 and NH3 as precursors. The growth temperature (T_g) was varied from 1300 to 1700℃. Prior to growth, the substrate surface was nitrided in a NH_3 flow at T_g. The XRD measurement has indicated that the crystallization is promoted with increasing Tg from 1300℃, resulting in the growth of the film strongly oriented towards c-axis at 1500℃. However, the further increase of T_g deteriorated the crystalline quality, which suggests the excessive nitridation of the substrate surface. The cathodoluminescence property has a correlation with the crystalline quality. The pronounced emission band characteristic of h-BN was also observed from the film grown at 1500℃.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) hexagonal boron nitride / CVD / thin film / cathodoluminescence
Paper # EID2013-14
Date of Issue

Conference Information
Committee EID
Conference Date 2014/1/17(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electronic Information Displays (EID)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Luminescence property of hexagonal boron nitride films grown by high-temperature CVD
Sub Title (in English)
Keyword(1) hexagonal boron nitride
Keyword(2) CVD
Keyword(3) thin film
Keyword(4) cathodoluminescence
1st Author's Name Naoki UMEHARA
1st Author's Affiliation Graduate School of Engineering, Shizuoka University()
2nd Author's Name Iori KUWAHARA
2nd Author's Affiliation Faculty of Engineering, Shizuoka University
3rd Author's Name Hey-Young LEE
3rd Author's Affiliation Graduate School of Engineering, Shizuoka University
4th Author's Name Tetsuya KOUNO
4th Author's Affiliation Graduate School of Engineering, Shizuoka University
5th Author's Name Hiroko KOMINAMI
5th Author's Affiliation Graduate School of Engineering, Shizuoka University
6th Author's Name Yoichiro NAKANISHI
6th Author's Affiliation Research Institute of Electronics, Shizuoka University
7th Author's Name Kazuhiko HARA
7th Author's Affiliation Research Institute of Electronics, Shizuoka University:Graduate School of Science and Technology, Shizuoka University
Date 2014-01-24
Paper # EID2013-14
Volume (vol) vol.113
Number (no) 408
Page pp.pp.-
#Pages 4
Date of Issue