Presentation 2014-01-24
The Properties of High-Temperature Superconducting Devices with Asymmetrical Nanobridges
Munenori YAMAMOTO, Masumi INOUE, Akira FUJIMAKI,
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Abstract(in English) For practical applications of SFQ circuits, it is necessary to decrease power consumption at the current-limiting resistors placed after the power supply. One of the candidates for the solutions is using rectifiers based on asymmetrical nanobridges. The vortex ratchet effect arises in asymmetrical nanobridges, causing asymmetrical I-V characteristics for asymmetrical nanobridges. By utilizing this ratchet effect, semiconductor-like diodes can be made with zero threshold voltage, which make it possible to form rectifiers applicable to SFQ circuits. In this study, we report the properties of high-temperature superconducting (HTS) devises with asymmetrical nanobridges The SQUIDs fabricated exhibit periodic behavior in magnetic field dependence of critical currents and that of voltages.
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Keyword(in English) HTS / asymmetrical nanobridge / SQUID
Paper # SCE2013-56
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Committee SCE
Conference Date 2014/1/16(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The Properties of High-Temperature Superconducting Devices with Asymmetrical Nanobridges
Sub Title (in English)
Keyword(1) HTS
Keyword(2) asymmetrical nanobridge
Keyword(3) SQUID
1st Author's Name Munenori YAMAMOTO
1st Author's Affiliation Department of Quantum Engineering, Nagoya University()
2nd Author's Name Masumi INOUE
2nd Author's Affiliation Department of Mechatronics Engineering, Meijo University
3rd Author's Name Akira FUJIMAKI
3rd Author's Affiliation Department of Quantum Engineering, Nagoya University
Date 2014-01-24
Paper # SCE2013-56
Volume (vol) vol.113
Number (no) 401
Page pp.pp.-
#Pages 6
Date of Issue