Presentation 2014-01-23
Robust HTS-SQUID Covered with HTS Film in Flip-Chip Configuration
Yoshimi Hatsukade, Keisuke Yoshida, Takahiro Kage, Toshifumi Suzuki, Saburo Tanaka,
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Abstract(in English) In this paper, we describe recent results to develop robust HTS-SQUIDs based on bicystal SrTiO3 (STO) substrates and YBa_2Cu_3O_<7-x> (YBCO) films. An alternative HTS film with mesh structure was fabricated and employed to cover an SQUID ring of a HTS-SQUID magnetometer with the same mesh structure in a flip-chip configuration. We expected the film would work as a superconducting shield to suppress change of the critical current Ic of the SQUID due to environmental magnetic noise, including the Earth's field. We applied DC and AC magnetic fields to the SQUID, in order to measure the SQUID's parameters such as I_c, voltage depth V_, flux noise level S_φ^<1/2>, and threshold DC field, at which the I_c was changed. Many of the SQUID's parameters were improved with the HTS film. As for the threshold DC field, of the SQUID changed at a DC field greater than about 140 μT with the HTS film. In an AC field at 10 MHz, the voltage depth V_ and and flux noise level S_φ^<1/2> of the SQUID with the HTS film degraded at lower amplitude of the AC field than the bare SQUID without the HTS film.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) HTS-SQUID / Robustness in magnetic field / alternative HTS film / Josephson junction / Meissner effect
Paper # SCE2013-39
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Conference Information
Committee SCE
Conference Date 2014/1/16(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Robust HTS-SQUID Covered with HTS Film in Flip-Chip Configuration
Sub Title (in English)
Keyword(1) HTS-SQUID
Keyword(2) Robustness in magnetic field
Keyword(3) alternative HTS film
Keyword(4) Josephson junction
Keyword(5) Meissner effect
1st Author's Name Yoshimi Hatsukade
1st Author's Affiliation Toyohashi University of Technology()
2nd Author's Name Keisuke Yoshida
2nd Author's Affiliation Toyohashi University of Technology
3rd Author's Name Takahiro Kage
3rd Author's Affiliation Toyohashi University of Technology
4th Author's Name Toshifumi Suzuki
4th Author's Affiliation Toyohashi University of Technology
5th Author's Name Saburo Tanaka
5th Author's Affiliation Toyohashi University of Technology
Date 2014-01-23
Paper # SCE2013-39
Volume (vol) vol.113
Number (no) 401
Page pp.pp.-
#Pages 5
Date of Issue