Presentation 2013-10-25
Application of InAs based quantum dot layer for high speed photo-detection device
Toshimasa UMEZAWA, Kouji AKAHANE, Atsushi KANNO, Tetsuya KAWANISHI,
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Abstract(in English) For an application of quantum dot photo-detection devices, we have proposed and demonstrated new high speed photodiodes using In As based quantum dots absorption layer. To compare the performances with conventional In GaAs based photodiode, low dark current, high absorption coefficient and avalanche multiplication effect were observed in the new devices. The 3dB bandwidth at low bias was expected as approximately 50GHz, and the Gain Bandwidth (GB) products in avalanche multiplication region would be 150GHz to 200GHz.
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Keyword(in English) InAs quantum dots / High speed photodiodes / high sensivity / avalanche multiplication / low dark current
Paper # OCS2013-68,OPE2013-114,LQE2013-84
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Committee OCS
Conference Date 2013/10/17(1days)
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Registration To Optical Communication Systems (OCS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Application of InAs based quantum dot layer for high speed photo-detection device
Sub Title (in English)
Keyword(1) InAs quantum dots
Keyword(2) High speed photodiodes
Keyword(3) high sensivity
Keyword(4) avalanche multiplication
Keyword(5) low dark current
1st Author's Name Toshimasa UMEZAWA
1st Author's Affiliation Photonic Network Research Institute, National Institute of Information and Communications Technology()
2nd Author's Name Kouji AKAHANE
2nd Author's Affiliation Photonic Network Research Institute, National Institute of Information and Communications Technology
3rd Author's Name Atsushi KANNO
3rd Author's Affiliation Photonic Network Research Institute, National Institute of Information and Communications Technology
4th Author's Name Tetsuya KAWANISHI
4th Author's Affiliation Photonic Network Research Institute, National Institute of Information and Communications Technology
Date 2013-10-25
Paper # OCS2013-68,OPE2013-114,LQE2013-84
Volume (vol) vol.113
Number (no) 262
Page pp.pp.-
#Pages 4
Date of Issue