Presentation 2013-10-24
Development of high performance ultrafast intersubband all-optical gate switch using ion implantation
Ryoichi AKIMOTO, Jijun EFNG, Shin-ichiro GOZU, Teruo MOZUME, Hiroshi ISHIKAWA,
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Abstract(in English) We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different band gap energies. Based on the ion-induced intermixing in In GaAs/AlAsSb coupled double quantum wells, the blue shift of the band edge can be tailored. Through phosphorus ion implantation and subsequent annealing, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ.
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Keyword(in English) intersubband transition / InGaAs/AlAsSb quantum well / cross-phase modulation / ion implantation / optical gate switch
Paper # OCS2013-48,OPE2013-94,LQE2013-64
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Conference Information
Committee OCS
Conference Date 2013/10/17(1days)
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Registration To Optical Communication Systems (OCS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of high performance ultrafast intersubband all-optical gate switch using ion implantation
Sub Title (in English)
Keyword(1) intersubband transition
Keyword(2) InGaAs/AlAsSb quantum well
Keyword(3) cross-phase modulation
Keyword(4) ion implantation
Keyword(5) optical gate switch
1st Author's Name Ryoichi AKIMOTO
1st Author's Affiliation Network Photonics Research Center,National Institute of Advanced Industrial Science and Technology()
2nd Author's Name Jijun EFNG
2nd Author's Affiliation Network Photonics Research Center,National Institute of Advanced Industrial Science and Technology
3rd Author's Name Shin-ichiro GOZU
3rd Author's Affiliation Network Photonics Research Center,National Institute of Advanced Industrial Science and Technology
4th Author's Name Teruo MOZUME
4th Author's Affiliation Network Photonics Research Center,National Institute of Advanced Industrial Science and Technology
5th Author's Name Hiroshi ISHIKAWA
5th Author's Affiliation Network Photonics Research Center,National Institute of Advanced Industrial Science and Technology
Date 2013-10-24
Paper # OCS2013-48,OPE2013-94,LQE2013-64
Volume (vol) vol.113
Number (no) 262
Page pp.pp.-
#Pages 4
Date of Issue