| Presentation | 2013-10-08 A Low Supply Voltage, Large "Read" Margin, Six-Transistor CMOS SRAM Employing Adaptively Lowering Word Line Voltage Nobuaki Kobayashi, Tadayoshi Enomoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We developed and applied a new circuit, called the "Self-controllable Voltage Level (SVL)" circuit, to achieve an expanded "read" margin in a low supply voltage 90-nm, 2-kbit, six-transistor CMOS SRAM. The SVL circuit can adaptively lower and higher the word-line voltages for a "read" and "write" operation, respectively. At the threshold voltage fluctuation of 6o, an operating VDD range was less than 1.15 V at the "read" margin of 0 V for the conventional SRAM, while on the other hand, the operating VDD range was less than 0.59 V at that for the newly developed SRAM. This result showed that the SVL circuit can significantly expand the "read" margin of the SRAM. An area overhead was 0.677% that of the cony. SRAM. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CMOS / SRAM / "read" margin / self-controllable voltage level circuit |
| Paper # | VLD2013-58,ICD2013-82,IE2013-58 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2013/9/30(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Low Supply Voltage, Large "Read" Margin, Six-Transistor CMOS SRAM Employing Adaptively Lowering Word Line Voltage |
| Sub Title (in English) | |
| Keyword(1) | CMOS |
| Keyword(2) | SRAM |
| Keyword(3) | "read" margin |
| Keyword(4) | self-controllable voltage level circuit |
| 1st Author's Name | Nobuaki Kobayashi |
| 1st Author's Affiliation | Graduate School of Science and Engineering, Chuo University() |
| 2nd Author's Name | Tadayoshi Enomoto |
| 2nd Author's Affiliation | Graduate School of Science and Engineering, Chuo University |
| Date | 2013-10-08 |
| Paper # | VLD2013-58,ICD2013-82,IE2013-58 |
| Volume (vol) | vol.113 |
| Number (no) | 236 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |