| Presentation | 2014-01-24 Electromagnetic Simulation of High Resistance Silicon Substrate by Helium ion Irradiation Yuki YAO, Takuichi HIRANO, Ning LI, Kenichi OKADA, Akira MATSUZAWA, Jiro HIROKAWA, Makoto ANDO, Takeshi INOUE, Akinori MASAOKA, Hitoshi SAKANE, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A helium(He)-3 ion bombardment technique has been proposed for creating locally high resistivity silicon substrate areas. High resistivity silicon (Si) substrate is implemented by lattice defects caused by ion irradiation. In this paper, electromagnetic simulation of high resistance silicon substrate by He-ion irradiation is performed by assuming the cavity is formed periodically. Effective relative permittivity and effective resistivity of the Si substrate are evaluated by the propagation constant using eigenmode analysis of a unit-cell. Reduction of conductivity is observed when the volume of the cavity in the unit-cell becomes larger. It was found by the simulation that the cavity must have 87.7% of the volume for high resistivity of 1kΩ・cm. From experimental result, the number of ions is 12.5 times larger than that of carriers in Si substrate. This means that the simulation with Maxwell equations with macroscopic electric constants is not sufficient. The simulation taking microscopic phenomena into account is a future work. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Helium ion irradiation / High resistivity / Silicon substrate / Material property / Eigenmode analysis / Electromagnetic simulation |
| Paper # | PN2013-61,OPE2013-175,LQE2013-161,EST2013-110,MWP2013-81 |
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| Conference Information | |
| Committee | PN |
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| Conference Date | 2014/1/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Photonic Network (PN) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electromagnetic Simulation of High Resistance Silicon Substrate by Helium ion Irradiation |
| Sub Title (in English) | |
| Keyword(1) | Helium ion irradiation |
| Keyword(2) | High resistivity |
| Keyword(3) | Silicon substrate |
| Keyword(4) | Material property |
| Keyword(5) | Eigenmode analysis |
| Keyword(6) | Electromagnetic simulation |
| 1st Author's Name | Yuki YAO |
| 1st Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Takuichi HIRANO |
| 2nd Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | Ning LI |
| 3rd Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 4th Author's Name | Kenichi OKADA |
| 4th Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 5th Author's Name | Akira MATSUZAWA |
| 5th Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 6th Author's Name | Jiro HIROKAWA |
| 6th Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 7th Author's Name | Makoto ANDO |
| 7th Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 8th Author's Name | Takeshi INOUE |
| 8th Author's Affiliation | S.H.I. Examination & Inspection, Ltd. |
| 9th Author's Name | Akinori MASAOKA |
| 9th Author's Affiliation | S.H.I. Examination & Inspection, Ltd. |
| 10th Author's Name | Hitoshi SAKANE |
| 10th Author's Affiliation | S.H.I. Examination & Inspection, Ltd. |
| Date | 2014-01-24 |
| Paper # | PN2013-61,OPE2013-175,LQE2013-161,EST2013-110,MWP2013-81 |
| Volume (vol) | vol.113 |
| Number (no) | 393 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |