Presentation 2013-10-23
Photoassisted Electron Emission from Silicon Cathodes
Hidetaka Shimawaki, Yoichiro Neo, Hidenori Mimura, Fujio Wakaya, Mikio Takai, Tomoya Yoshida, Masayoshi Nagao,
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Abstract(in English) The photo response of electron emission from nanocrystalline silicon based Metal-oxide-semiconductor (MOS) cathodes and gated Si field emitter arrays have been investigated under irradiation of laser pulses with the wavelengths of 633 nm and 405 nm. A modulated electron beam is generated directly from the each cathode device by laser pulses. The rise time of the photo response in the MOS cathode device is at least on nanosecond scale. In addition, this paper shows that the gated field emitter structure designed with gate aperture less than a half micrometer blocks effectively excitation of diffusion electrons outside the depletion region which causes slow response.
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Keyword(in English) photoassisted electron emission / modulated electron beam / MOS cathode / field emitter array
Paper # ED2013-57
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Committee ED
Conference Date 2013/10/15(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Photoassisted Electron Emission from Silicon Cathodes
Sub Title (in English)
Keyword(1) photoassisted electron emission
Keyword(2) modulated electron beam
Keyword(3) MOS cathode
Keyword(4) field emitter array
1st Author's Name Hidetaka Shimawaki
1st Author's Affiliation Faculty of Engineering,Hachinohe Institute of Technology()
2nd Author's Name Yoichiro Neo
2nd Author's Affiliation Research Institute of Electronics,Shizuoka University
3rd Author's Name Hidenori Mimura
3rd Author's Affiliation Research Institute of Electronics,Shizuoka University
4th Author's Name Fujio Wakaya
4th Author's Affiliation Center for Quantum Science and Technology under Extreme Conditions,Osaka University
5th Author's Name Mikio Takai
5th Author's Affiliation Center for Quantum Science and Technology under Extreme Conditions,Osaka University
6th Author's Name Tomoya Yoshida
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology
7th Author's Name Masayoshi Nagao
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology
Date 2013-10-23
Paper # ED2013-57
Volume (vol) vol.113
Number (no) 257
Page pp.pp.-
#Pages 4
Date of Issue