Presentation | 2013-10-25 Low temperature growth and structural characterization for SiC films by HWCVD using filaments coated with SiC Katsuya ABE, Hayato Ozawa, Tomohiko Yamakami, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | SiC films were prepared at low substrate temperature with changing substrate-filament distance and growth pressure by hot-wire CVD method using graphite catalysts coated with SiC. The crystallinity of film was improved with decreasing substrate-filament distance. Thus, it was confirmed from XRD patterns that pc-SiC films were successfully obtained at low substrate temperature of 400°C. The growth mechanisms in gas phase and on growth surface were. considered from the experimental results and it was suggested that the optimization of both the substrate-filament distance and growth pressure was required to improve crystallinity of SiC film. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | HW-CVD / SiC / Low temperature growth |
Paper # | CPM2013-105 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2013/10/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low temperature growth and structural characterization for SiC films by HWCVD using filaments coated with SiC |
Sub Title (in English) | |
Keyword(1) | HW-CVD |
Keyword(2) | SiC |
Keyword(3) | Low temperature growth |
1st Author's Name | Katsuya ABE |
1st Author's Affiliation | Faculty of Engineering, Shinshu University() |
2nd Author's Name | Hayato Ozawa |
2nd Author's Affiliation | Faculty of Engineering, Shinshu University |
3rd Author's Name | Tomohiko Yamakami |
3rd Author's Affiliation | Faculty of Engineering, Shinshu University |
Date | 2013-10-25 |
Paper # | CPM2013-105 |
Volume (vol) | vol.113 |
Number (no) | 268 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |