Presentation 2013-10-25
Low temperature growth and structural characterization for SiC films by HWCVD using filaments coated with SiC
Katsuya ABE, Hayato Ozawa, Tomohiko Yamakami,
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Abstract(in English) SiC films were prepared at low substrate temperature with changing substrate-filament distance and growth pressure by hot-wire CVD method using graphite catalysts coated with SiC. The crystallinity of film was improved with decreasing substrate-filament distance. Thus, it was confirmed from XRD patterns that pc-SiC films were successfully obtained at low substrate temperature of 400°C. The growth mechanisms in gas phase and on growth surface were. considered from the experimental results and it was suggested that the optimization of both the substrate-filament distance and growth pressure was required to improve crystallinity of SiC film.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) HW-CVD / SiC / Low temperature growth
Paper # CPM2013-105
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Committee CPM
Conference Date 2013/10/17(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low temperature growth and structural characterization for SiC films by HWCVD using filaments coated with SiC
Sub Title (in English)
Keyword(1) HW-CVD
Keyword(2) SiC
Keyword(3) Low temperature growth
1st Author's Name Katsuya ABE
1st Author's Affiliation Faculty of Engineering, Shinshu University()
2nd Author's Name Hayato Ozawa
2nd Author's Affiliation Faculty of Engineering, Shinshu University
3rd Author's Name Tomohiko Yamakami
3rd Author's Affiliation Faculty of Engineering, Shinshu University
Date 2013-10-25
Paper # CPM2013-105
Volume (vol) vol.113
Number (no) 268
Page pp.pp.-
#Pages 4
Date of Issue