| Presentation | 2013-10-24 Properties of SiN_x films prepared by low process temperature Mayumi B TAKEYAMA, Masaru SATO, Yoshihiro NAKATA, Yasushi KOBAYASHI, Tomoji NAKAMURA, Atsushi NOYA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | 3-dimensional stacked LSI is attracted much attention to solve the issues how to develop the integration density and/or functional variety of LSI without depending on the scaling down of the circuit size alone. Through-Si-Via (TSV) is an essential wiring technology to form a stack of chips or wafers in 3-D LSI. We examine the characterization of SiN_x films deposited by reactive-sputtering and PECVD at low temperatures as an insulating barrier applicable to TSV. Features of prepared SiNx films, such as film density, refractive index, composition, are dependent on the ratio of the amount of Si-N chemical bonds to those of Si-O and Si-Si bonds in the film. It is revealed that the higher ratio of the Si-N bonds in the film is important factor for good density and/or refractive index of the film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 3-dimensional stacked LSI / Through Si via / SiN_x film / low temperature process / reactive sputtering / PECVD |
| Paper # | CPM2013-100 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2013/10/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Properties of SiN_x films prepared by low process temperature |
| Sub Title (in English) | |
| Keyword(1) | 3-dimensional stacked LSI |
| Keyword(2) | Through Si via |
| Keyword(3) | SiN_x film |
| Keyword(4) | low temperature process |
| Keyword(5) | reactive sputtering |
| Keyword(6) | PECVD |
| 1st Author's Name | Mayumi B TAKEYAMA |
| 1st Author's Affiliation | Faculty of Engineering,Kitami institute of technology() |
| 2nd Author's Name | Masaru SATO |
| 2nd Author's Affiliation | Faculty of Engineering,Kitami institute of technology |
| 3rd Author's Name | Yoshihiro NAKATA |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Yasushi KOBAYASHI |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Tomoji NAKAMURA |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Atsushi NOYA |
| 6th Author's Affiliation | Faculty of Engineering,Kitami institute of technology |
| Date | 2013-10-24 |
| Paper # | CPM2013-100 |
| Volume (vol) | vol.113 |
| Number (no) | 268 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |