Presentation 2013-10-24
Growth time dependence of quality of PbS thin films prepared by chemical bath deposition
Daiki MASU, Yasushi TAKANO, Akihiro ISHIDA,
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Abstract(in English) Lead sulfide (PbS) films were deposited by chemical bath deposition (CBD) method on glass substrate and n-Si(111) substrate. The conditions of high solution temperature decreased photoconductivity/dark conductivity and corrupted rectification property of PbS/n-Si diode. Photoconductivity/dark conductivity and current-voltage measurements of films prepared at variety growth periods shows that electrical properties of the films differ between films prepared in early stage of solution and in later stage of solution. Promising rectification property was obtained in PbS/n-Si diode prepared by using early stage of solution.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) chemical bath deposition / PbS / photoconductivity
Paper # CPM2013-96
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Conference Information
Committee CPM
Conference Date 2013/10/17(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth time dependence of quality of PbS thin films prepared by chemical bath deposition
Sub Title (in English)
Keyword(1) chemical bath deposition
Keyword(2) PbS
Keyword(3) photoconductivity
1st Author's Name Daiki MASU
1st Author's Affiliation Faculty of Engineering,Shizuoka University()
2nd Author's Name Yasushi TAKANO
2nd Author's Affiliation /
3rd Author's Name Akihiro ISHIDA
3rd Author's Affiliation
Date 2013-10-24
Paper # CPM2013-96
Volume (vol) vol.113
Number (no) 268
Page pp.pp.-
#Pages 4
Date of Issue