Presentation 2013-08-29
Evaluation of LSI Inner Structure by Using Quasi-static Electrical Field Sensing Technology
Masaru SANADA, Seigo ITO,
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Abstract(in English) Quasi-static electrical field, being one of electrical fields which does not bring magnetic field, is distributed widely around devises. This electrical field is possible to measure with non-bias state. Additionally this field does not involve reflection and diffraction phenomenon. These features bring accurate evaluation result. By using measurement system combined QEF sensor* unit with Laser microscope built-in OBIC function, an evaluation of LSI inner state was experimented. The evaluation outcomes were discrimination of substrate impurity type and also detection of void portion on metal line. These results indicated that this technology was suitable way to evaluate diffusion layer and substrate it. Concurrently, a couple of problems caused by measurement system were become clearly. The aim of this technology application is to obtain crystal defect distribution and mapping. *QEF sensor is named as NEPS (Nano Electrostatic field Probe Sensor).
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Keyword(in English) Quasi-static Electrical Field / Laser / LSI / Non-Bias State Evaluation / Failure Analysis
Paper # R2013-41,EMD2013-47,CPM2013-66,OPE2013-70,LQE2013-40
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Conference Information
Committee EMD
Conference Date 2013/8/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of LSI Inner Structure by Using Quasi-static Electrical Field Sensing Technology
Sub Title (in English)
Keyword(1) Quasi-static Electrical Field
Keyword(2) Laser
Keyword(3) LSI
Keyword(4) Non-Bias State Evaluation
Keyword(5) Failure Analysis
1st Author's Name Masaru SANADA
1st Author's Affiliation School of System Engineering, Kochi University of Technology()
2nd Author's Name Seigo ITO
2nd Author's Affiliation Engineering Group, Konaka Electronics
Date 2013-08-29
Paper # R2013-41,EMD2013-47,CPM2013-66,OPE2013-70,LQE2013-40
Volume (vol) vol.113
Number (no) 187
Page pp.pp.-
#Pages 6
Date of Issue