| Presentation | 2013-08-29 Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates Kohei MIURA, Yasuhiro IGUCHI, Yuuichi KAWAMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Type-II InAs/GaSb superlattices (SLs), which are attractive for absorption layers of mid-infrared sensors, are usually grown on GaSb substrates. Since GaSb substrates absorb infrared light, other substrates with high transparency are favorable for back-illuminated sensors. We have focused on InP substrate with high transparency and relatively small lattice mismatch. The crystallographic and optical quality of SLs improved as GaSb buffer layer thickness increased due to the reduction of threading dislocations. Infrared sensors with InAs/GaSb SL absorption layers grown on InP substrates were fabricated for the first time. Mid-infrared sensors using InAs/GaSb SLs on InP substrates are promising. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaSb / InAs / type-II superlattice / InP / mid-infrared sensor / dark current |
| Paper # | R2013-32,EMD2013-38,CPM2013-57,OPE2013-61,LQE2013-31 |
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| Conference Information | |
| Committee | EMD |
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| Conference Date | 2013/8/22(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electromechanical Devices (EMD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates |
| Sub Title (in English) | |
| Keyword(1) | GaSb |
| Keyword(2) | InAs |
| Keyword(3) | type-II superlattice |
| Keyword(4) | InP |
| Keyword(5) | mid-infrared sensor |
| Keyword(6) | dark current |
| 1st Author's Name | Kohei MIURA |
| 1st Author's Affiliation | Transmission Device R&D Laboratories, Sumitomo Electric Industries, Ltd.() |
| 2nd Author's Name | Yasuhiro IGUCHI |
| 2nd Author's Affiliation | Transmission Device R&D Laboratories, Sumitomo Electric Industries, Ltd. |
| 3rd Author's Name | Yuuichi KAWAMURA |
| 3rd Author's Affiliation | School of Engineering, Osaka Prefecture University |
| Date | 2013-08-29 |
| Paper # | R2013-32,EMD2013-38,CPM2013-57,OPE2013-61,LQE2013-31 |
| Volume (vol) | vol.113 |
| Number (no) | 187 |
| Page | pp.pp.- |
| #Pages | 6 |
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