Presentation	2013-08-02 SRAM Cell Stability Parameter : Noise Margin or Vmin? Anil KUMAR, Takuya SARAYA, Shinji MIYANO, Toshiro HIRAMOTO,
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Abstract(in English)	This paper reports the comprehensive analysis of the stability parameter of SRAM cells. Results show that even if noise margin (NM) of SRAM cells is same at higher V_ , minimum operation voltage (Vmin) of the same cells is different. The origin of this discrepancy is analyzed. It can be concluded that NM at high V_ is not a good indicator and NM should be measured at as low V_ as possible to obtain NM data that are well correlated with Vmin.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	CMOS / SRAM / Vmin
Paper #	SDM2013-74,ICD2013-56
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Committee	ICD
Conference Date	2013/7/25(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	SRAM Cell Stability Parameter : Noise Margin or Vmin?
Sub Title (in English)
Keyword(1)	CMOS
Keyword(2)	SRAM
Keyword(3)	Vmin
1st Author's Name	Anil KUMAR
1st Author's Affiliation	Institute of Industrial Science, University of Tokyo()
2nd Author's Name	Takuya SARAYA
2nd Author's Affiliation	Institute of Industrial Science, University of Tokyo
3rd Author's Name	Shinji MIYANO
3rd Author's Affiliation	STARC
4th Author's Name	Toshiro HIRAMOTO
4th Author's Affiliation	Institute of Industrial Science, University of Tokyo
Date	2013-08-02
Paper #	SDM2013-74,ICD2013-56
Volume (vol)	vol.113
Number (no)	173
Page	pp.pp.-
#Pages	4
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