Presentation 2013-08-01
Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect
Yukinori MORITA, Takahiro MORI, Shinji MIGITA, Wataru MIZUBAYASHI, Akihito TANABE, Koichi FUKUDA, Kazuhiko ENDO, Takashi MATSUKAWA, Shin-ichi O'UCHI, Yongxun LIU, Meishoku MASAHARA, Hiroyuki OTA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) A synthetic electric field effect to enhance the performance of tunnel field-effect transistors (TFETs) is proposed. The TFET utilizes both top- and side-gate electric fields induced by a wrapped gate electrode configuration. The device concept was experimentally verified by fabricating Si-TFETs integrated with ultrathin epitaxial channel. Scaling of both the channel width and channel thickness enhances the TFET performance owing to the enhanced synthetic electric field.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Tunnel FET / TFET / synthetic electric field / epitaxial growth
Paper # SDM2013-66,ICD2013-48
Date of Issue

Conference Information
Committee ICD
Conference Date 2013/7/25(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect
Sub Title (in English)
Keyword(1) Tunnel FET
Keyword(2) TFET
Keyword(3) synthetic electric field
Keyword(4) epitaxial growth
1st Author's Name Yukinori MORITA
1st Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)()
2nd Author's Name Takahiro MORI
2nd Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Shinji MIGITA
3rd Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Wataru MIZUBAYASHI
4th Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Akihito TANABE
5th Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Koichi FUKUDA
6th Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Kazuhiko ENDO
7th Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
8th Author's Name Takashi MATSUKAWA
8th Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
9th Author's Name Shin-ichi O'UCHI
9th Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
10th Author's Name Yongxun LIU
10th Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
11th Author's Name Meishoku MASAHARA
11th Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
12th Author's Name Hiroyuki OTA
12th Author's Affiliation Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
Date 2013-08-01
Paper # SDM2013-66,ICD2013-48
Volume (vol) vol.113
Number (no) 173
Page pp.pp.-
#Pages 6
Date of Issue