| Presentation | 2013-08-02 A 123μW Standby Power Technique with EM-Tolerant 1.8V I/O NMOS Power Switch in 28nm HKMG Technology kAZUKI fukuoka, Ryo MORI, Akira KATO, Mitsuhiko IGARASHI, Koji SHIBUTANI, Takashi YAMAKI, Koji NII, Sadayuki MORITA, Takao KOIKE, Noriaki SAKAMOTO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed a power-gating technique in 28 nm HKMG technology. The proposed EM-tolerant 1.8 V I/O NMOS power switch reduces the standby power to 1/641× without decreasing channel utilization. The active leakage power of the dual CPU cores can be reduced by 45 mW in a single core operation mode with a rapid 1.4 μs wakeup time to full core operation. A mobile processor is designed and fabricated with proposed technique. The estimated standby power of the chip is 123 μW and is smaller than the conventional techniques. Measured leakage power shows a good agreement with the estimated one. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 28 nm HKMG / power-gating / 1.8V I/O NMOS power switch / EM-tolerant / 123 μW standby power |
| Paper # | SDM2013-78,ICD2013-60 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2013/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 123μW Standby Power Technique with EM-Tolerant 1.8V I/O NMOS Power Switch in 28nm HKMG Technology |
| Sub Title (in English) | |
| Keyword(1) | 28 nm HKMG |
| Keyword(2) | power-gating |
| Keyword(3) | 1.8V I/O NMOS power switch |
| Keyword(4) | EM-tolerant |
| Keyword(5) | 123 μW standby power |
| 1st Author's Name | kAZUKI fukuoka |
| 1st Author's Affiliation | Renesas Electronics Corporation() |
| 2nd Author's Name | Ryo MORI |
| 2nd Author's Affiliation | Renesas Electronics Corporation |
| 3rd Author's Name | Akira KATO |
| 3rd Author's Affiliation | Renesas Electronics Corporation |
| 4th Author's Name | Mitsuhiko IGARASHI |
| 4th Author's Affiliation | Renesas Electronics Corporation |
| 5th Author's Name | Koji SHIBUTANI |
| 5th Author's Affiliation | Renesas Electronics Corporation |
| 6th Author's Name | Takashi YAMAKI |
| 6th Author's Affiliation | Renesas Electronics Corporation |
| 7th Author's Name | Koji NII |
| 7th Author's Affiliation | Renesas Electronics Corporation |
| 8th Author's Name | Sadayuki MORITA |
| 8th Author's Affiliation | Renesas Electronics Corporation |
| 9th Author's Name | Takao KOIKE |
| 9th Author's Affiliation | Renesas Mobile Corporation |
| 10th Author's Name | Noriaki SAKAMOTO |
| 10th Author's Affiliation | Renesas Mobile Corporation |
| Date | 2013-08-02 |
| Paper # | SDM2013-78,ICD2013-60 |
| Volume (vol) | vol.113 |
| Number (no) | 172 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |