Presentation	2013-08-02 Reduced Cell Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Supply Voltage of 0.4V Tomoko MIZUTANI, Yoshiki YAMAMOTO, Hideki MAKIYAMA, Hirofumi SHINOHARA, Toshiaki IWAMATSU, Hidekazu ODA, Nobuyuki SUGII, Toshiro HIRAMOTO,
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Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	Cell current (I_) variability in 6T-SRAM composed of silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is measured and compared with that of conventional bulk MOSFETs. It is found that I_ variability in SOTB SRAM is drastically suppressed compared with bulk SRAM especially at low supply voltage (V_ ) of 0.4V. It is confirmed that the main origin of suppressed I_ variability is small V_	variability while small Gm, DIBL, and current-onset voltage (COV) variability has only minor effects.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Variability / Cell Current / FD SOI
Paper #	SDM2013-75,ICD2013-57
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Committee	SDM
Conference Date	2013/7/25(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Reduced Cell Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Supply Voltage of 0.4V
Sub Title (in English)
Keyword(1)	Variability
Keyword(2)	Cell Current
Keyword(3)	FD SOI
1st Author's Name	Tomoko MIZUTANI
1st Author's Affiliation	Institute of Industrial Science, The University of Tokyo()
2nd Author's Name	Yoshiki YAMAMOTO
2nd Author's Affiliation	Low-power Electronics Association & Project (LEAP)
3rd Author's Name	Hideki MAKIYAMA
3rd Author's Affiliation	Low-power Electronics Association & Project (LEAP)
4th Author's Name	Hirofumi SHINOHARA
4th Author's Affiliation	Low-power Electronics Association & Project (LEAP)
5th Author's Name	Toshiaki IWAMATSU
5th Author's Affiliation	Low-power Electronics Association & Project (LEAP)
6th Author's Name	Hidekazu ODA
6th Author's Affiliation	Low-power Electronics Association & Project (LEAP)
7th Author's Name	Nobuyuki SUGII
7th Author's Affiliation	Low-power Electronics Association & Project (LEAP)
8th Author's Name	Toshiro HIRAMOTO
8th Author's Affiliation	Institute of Industrial Science, The University of Tokyo
Date	2013-08-02
Paper #	SDM2013-75,ICD2013-57
Volume (vol)	vol.113
Number (no)	172
Page	pp.pp.-
#Pages	6
Date of Issue