Presentation | 2013-08-01 Analysis of Steep Subthreshold Slope Characteristics in SOI MOSFET Takayuki MORI, Jiro IDA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have found out that the steep Subthreshold Slope (SS) appears in the Floating-Body (FB) and the Body-Tied (BT) SOI MOSFET and its mechanism have investigated. The steep SS in the FB occurs by Floating Body Effect (FBE), while the steep SS in the BT occurs by Parasitic Bipolar Transistor (PBT) caused by the voltage drop with the body current. In addition to those, the steep SS tends to appear in the Partially Depleted (PD) SOI MOSFET. In order to generate the steep SS at lower voltages, it is necessary to optimize the SOI film thickness and the gate oxide thickness by a different method from the conventional scaling. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SOI / Floating-Body / Body-Tied / Steep Subthreshold Slope |
Paper # | SDM2013-65,ICD2013-47 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2013/7/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analysis of Steep Subthreshold Slope Characteristics in SOI MOSFET |
Sub Title (in English) | |
Keyword(1) | SOI |
Keyword(2) | Floating-Body |
Keyword(3) | Body-Tied |
Keyword(4) | Steep Subthreshold Slope |
1st Author's Name | Takayuki MORI |
1st Author's Affiliation | Department of Electrical and Electronic Engineering, Kanazawa Institute of Technology() |
2nd Author's Name | Jiro IDA |
2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Kanazawa Institute of Technology |
Date | 2013-08-01 |
Paper # | SDM2013-65,ICD2013-47 |
Volume (vol) | vol.113 |
Number (no) | 172 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |