Presentation 2013-08-01
Analysis of Steep Subthreshold Slope Characteristics in SOI MOSFET
Takayuki MORI, Jiro IDA,
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Abstract(in English) We have found out that the steep Subthreshold Slope (SS) appears in the Floating-Body (FB) and the Body-Tied (BT) SOI MOSFET and its mechanism have investigated. The steep SS in the FB occurs by Floating Body Effect (FBE), while the steep SS in the BT occurs by Parasitic Bipolar Transistor (PBT) caused by the voltage drop with the body current. In addition to those, the steep SS tends to appear in the Partially Depleted (PD) SOI MOSFET. In order to generate the steep SS at lower voltages, it is necessary to optimize the SOI film thickness and the gate oxide thickness by a different method from the conventional scaling.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI / Floating-Body / Body-Tied / Steep Subthreshold Slope
Paper # SDM2013-65,ICD2013-47
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Committee SDM
Conference Date 2013/7/25(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Steep Subthreshold Slope Characteristics in SOI MOSFET
Sub Title (in English)
Keyword(1) SOI
Keyword(2) Floating-Body
Keyword(3) Body-Tied
Keyword(4) Steep Subthreshold Slope
1st Author's Name Takayuki MORI
1st Author's Affiliation Department of Electrical and Electronic Engineering, Kanazawa Institute of Technology()
2nd Author's Name Jiro IDA
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Kanazawa Institute of Technology
Date 2013-08-01
Paper # SDM2013-65,ICD2013-47
Volume (vol) vol.113
Number (no) 172
Page pp.pp.-
#Pages 6
Date of Issue