Presentation | 2013-08-02 Barrier properties of TaWN films in Cu/Si contact Mayumi B. TAKEYAMA, Masaru SATO, Atsushi NOYA, |
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Abstract(in English) | In the Si-LSI technology, a barrier material of high thermal and structural stability is required for realization of high reliable Cu interconnects. Ternary alloy barriers are known as one of the most thermally stable barrier materials. However, they simultaneously show high resistivity. A barrier in high resistivity is less favorable because of the signal delay caused by RC time constant. We propose an application of a TaWN ternary alloy film with a low resistivity as a diffusion barrier for a Cu plug. In this study, we have examined characterization and barrier properties of the TaWN films in the Cu/Si contact. The present TaWN ternary alloy films are superior in barrier properties to that of TaN in the Cu/TaN/Si system, indicating usefulness as a candidate of the barrier for a Cu plug. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | LSI / Cu plug / TaWN alloy barrier / barrier property / low resistivity |
Paper # | CPM2013-52 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2013/7/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Barrier properties of TaWN films in Cu/Si contact |
Sub Title (in English) | |
Keyword(1) | LSI |
Keyword(2) | Cu plug |
Keyword(3) | TaWN alloy barrier |
Keyword(4) | barrier property |
Keyword(5) | low resistivity |
1st Author's Name | Mayumi B. TAKEYAMA |
1st Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology() |
2nd Author's Name | Masaru SATO |
2nd Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology |
3rd Author's Name | Atsushi NOYA |
3rd Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology |
Date | 2013-08-02 |
Paper # | CPM2013-52 |
Volume (vol) | vol.113 |
Number (no) | 171 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |