Presentation 2013-08-02
Barrier properties of TaWN films in Cu/Si contact
Mayumi B. TAKEYAMA, Masaru SATO, Atsushi NOYA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) In the Si-LSI technology, a barrier material of high thermal and structural stability is required for realization of high reliable Cu interconnects. Ternary alloy barriers are known as one of the most thermally stable barrier materials. However, they simultaneously show high resistivity. A barrier in high resistivity is less favorable because of the signal delay caused by RC time constant. We propose an application of a TaWN ternary alloy film with a low resistivity as a diffusion barrier for a Cu plug. In this study, we have examined characterization and barrier properties of the TaWN films in the Cu/Si contact. The present TaWN ternary alloy films are superior in barrier properties to that of TaN in the Cu/TaN/Si system, indicating usefulness as a candidate of the barrier for a Cu plug.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) LSI / Cu plug / TaWN alloy barrier / barrier property / low resistivity
Paper # CPM2013-52
Date of Issue

Conference Information
Committee CPM
Conference Date 2013/7/25(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Barrier properties of TaWN films in Cu/Si contact
Sub Title (in English)
Keyword(1) LSI
Keyword(2) Cu plug
Keyword(3) TaWN alloy barrier
Keyword(4) barrier property
Keyword(5) low resistivity
1st Author's Name Mayumi B. TAKEYAMA
1st Author's Affiliation Faculty of Engineering, Kitami Institute of Technology()
2nd Author's Name Masaru SATO
2nd Author's Affiliation Faculty of Engineering, Kitami Institute of Technology
3rd Author's Name Atsushi NOYA
3rd Author's Affiliation Faculty of Engineering, Kitami Institute of Technology
Date 2013-08-02
Paper # CPM2013-52
Volume (vol) vol.113
Number (no) 171
Page pp.pp.-
#Pages 4
Date of Issue