Presentation 2013-08-02
Barrier Properties of Nanocrystalline HfN_x Films Applicable to Through Si Via
Masaru SATO, Mayumi B TAKEYAMA, Eiji AOYAGI, Atsushi NOYA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Through silicon via (TSV) technology is important to realize 3D integration by stacking chips or wafers. We propose concept of the diffusion barrier material for Cu as a conducting material filled in a downsized via. We choose HfN_x as a material that will meet the concept and examine properties of the HfN_x film as a barrier in the Cu/HfN_x/SiO_2/Si model system. It is revealed that the HfN_x film consists of an HfN phase in a nanocrystalline texture shows good properties as a barrier for TSV application satisfying the concept proposed, indicating that the concept are also valid for that of TSV technology.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TSV / 3D integration / barrier material / HfN / nanocrystalline
Paper # CPM2013-51
Date of Issue

Conference Information
Committee CPM
Conference Date 2013/7/25(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Barrier Properties of Nanocrystalline HfN_x Films Applicable to Through Si Via
Sub Title (in English)
Keyword(1) TSV
Keyword(2) 3D integration
Keyword(3) barrier material
Keyword(4) HfN
Keyword(5) nanocrystalline
1st Author's Name Masaru SATO
1st Author's Affiliation Faculty of Engineering, Kitami Institute of Technology()
2nd Author's Name Mayumi B TAKEYAMA
2nd Author's Affiliation Faculty of Engineering, Kitami Institute of Technology
3rd Author's Name Eiji AOYAGI
3rd Author's Affiliation Institute for Materials Research, Tohoku University
4th Author's Name Atsushi NOYA
4th Author's Affiliation Faculty of Engineering, Kitami Institute of Technology
Date 2013-08-02
Paper # CPM2013-51
Volume (vol) vol.113
Number (no) 171
Page pp.pp.-
#Pages 6
Date of Issue