Presentation | 2013-08-02 Barrier Properties of Nanocrystalline HfN_x Films Applicable to Through Si Via Masaru SATO, Mayumi B TAKEYAMA, Eiji AOYAGI, Atsushi NOYA, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Through silicon via (TSV) technology is important to realize 3D integration by stacking chips or wafers. We propose concept of the diffusion barrier material for Cu as a conducting material filled in a downsized via. We choose HfN_x as a material that will meet the concept and examine properties of the HfN_x film as a barrier in the Cu/HfN_x/SiO_2/Si model system. It is revealed that the HfN_x film consists of an HfN phase in a nanocrystalline texture shows good properties as a barrier for TSV application satisfying the concept proposed, indicating that the concept are also valid for that of TSV technology. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | TSV / 3D integration / barrier material / HfN / nanocrystalline |
Paper # | CPM2013-51 |
Date of Issue |
Conference Information | |
Committee | CPM |
---|---|
Conference Date | 2013/7/25(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Barrier Properties of Nanocrystalline HfN_x Films Applicable to Through Si Via |
Sub Title (in English) | |
Keyword(1) | TSV |
Keyword(2) | 3D integration |
Keyword(3) | barrier material |
Keyword(4) | HfN |
Keyword(5) | nanocrystalline |
1st Author's Name | Masaru SATO |
1st Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology() |
2nd Author's Name | Mayumi B TAKEYAMA |
2nd Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology |
3rd Author's Name | Eiji AOYAGI |
3rd Author's Affiliation | Institute for Materials Research, Tohoku University |
4th Author's Name | Atsushi NOYA |
4th Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology |
Date | 2013-08-02 |
Paper # | CPM2013-51 |
Volume (vol) | vol.113 |
Number (no) | 171 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |