| Presentation | 2013-08-02 Crystalline structure of ZnO thin films grown on a-plane sapphire substrates using high-energy H_2O produced by a Pt-catalyzed H_2-O_2 reaction Naoya YAMAGUCHI, Tomohiko Takeuchi, Tomoki Nakamura, Yuuki OHASHI, Eichi NAGATOMI, Yasuhiro TAMAYAMA, Kanji YASUI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Crystalline structure of ZnO thin films, which were grown on a-plane sapphire substrates through a reaction between dimethylzinc and high-temperature H_2O produced by a Pt-catalyzed H_2-O_2 reaction, was measured. From the thickness dependence of the electrical properties, the electron mobility at room temperature increased from 54 to 189 cm^2V^<-1>s^<-1> with increasing film thickness from 200 nm to 2800 nm. The temperature dependences of the Hall mobility and carrier concentration of ZnO films with thinner than 500 nm and thicker than 500 nm were quite different. The existence of the layer with high-defect density near the film-substrate interface was estimated. In this study, the crystalline structure of the ZnO film with 5μm thickness grown on the a-plane sapphire substrates was observed using cross-sectional transmission electron microscopy (TEM). The dislocation density in the films was also evaluated under two-beam condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ZnO / catalytic reaction / high-temperature H_2O / crystalline structure / dislocation |
| Paper # | CPM2013-49 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 2013/7/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Crystalline structure of ZnO thin films grown on a-plane sapphire substrates using high-energy H_2O produced by a Pt-catalyzed H_2-O_2 reaction |
| Sub Title (in English) | |
| Keyword(1) | ZnO |
| Keyword(2) | catalytic reaction |
| Keyword(3) | high-temperature H_2O |
| Keyword(4) | crystalline structure |
| Keyword(5) | dislocation |
| 1st Author's Name | Naoya YAMAGUCHI |
| 1st Author's Affiliation | Faculty of Engineering, Nagaoka University of Technology() |
| 2nd Author's Name | Tomohiko Takeuchi |
| 2nd Author's Affiliation | Faculty of Engineering, Nagaoka University of Technology |
| 3rd Author's Name | Tomoki Nakamura |
| 3rd Author's Affiliation | Faculty of Engineering, Nagaoka University of Technology |
| 4th Author's Name | Yuuki OHASHI |
| 4th Author's Affiliation | Faculty of Engineering, Nagaoka University of Technology |
| 5th Author's Name | Eichi NAGATOMI |
| 5th Author's Affiliation | Faculty of Engineering, Nagaoka University of Technology |
| 6th Author's Name | Yasuhiro TAMAYAMA |
| 6th Author's Affiliation | Faculty of Engineering, Nagaoka University of Technology |
| 7th Author's Name | Kanji YASUI |
| 7th Author's Affiliation | Faculty of Engineering, Nagaoka University of Technology |
| Date | 2013-08-02 |
| Paper # | CPM2013-49 |
| Volume (vol) | vol.113 |
| Number (no) | 171 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |