Presentation 2013-08-02
Preparation and Evaluation of ZnO-Based Transparent Conducting Thin Films
Satoru NOGE, Kentaro KONISHI,
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Abstract(in English) Gallium doped zinc oxide (GZO) thin films were prepared on glass substrates and Si substrates by RF magnetron sputtering method by changing following parameters, oxygen concentration, number of Gallium pellets on ZnO target and substrate temperature. The resistivity and transmittance of these films were investigated by four-probe method and measurement system using a spectrometer. As a result, the GZO thin film having minimum resistivity of 2.32×10^<-3> Ωcm and average transmittance of 92.5 % in visible light region was obtained following conditions, oxygen concentration; 0 %, number of Gallium pellets on ZnO target; 3 pellet, substrate temperature; 330℃.
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Keyword(in English) ZnO / AZO / GZO / Sputtering / Oxide Semiconductor
Paper # CPM2013-48
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Committee CPM
Conference Date 2013/7/25(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation and Evaluation of ZnO-Based Transparent Conducting Thin Films
Sub Title (in English)
Keyword(1) ZnO
Keyword(2) AZO
Keyword(3) GZO
Keyword(4) Sputtering
Keyword(5) Oxide Semiconductor
1st Author's Name Satoru NOGE
1st Author's Affiliation Electrical and Electronics Engineering, Numazu NCT()
2nd Author's Name Kentaro KONISHI
2nd Author's Affiliation Advanced course, Numazu NCT
Date 2013-08-02
Paper # CPM2013-48
Volume (vol) vol.113
Number (no) 171
Page pp.pp.-
#Pages 5
Date of Issue