Presentation | 2013-08-01 Formation of chemically inert interface between Al and Al_3Nb thin films Atsushi NOYA, Mayumi B TAKEYAMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We propose a chemically inert interface, at which no solid-phase reaction takes place, between Al and an underlying aluminide thin film. We confirm validity of the proposed concept in the Al/Al_3Nb/SiO_2/Si system. We obtain Al(111) texture on the Al_3Nb(112) layer, and the Al/Al_3Nb interface is chemically inert without reaction at temperatures up to 750℃. We can demonstrate the chemically inert interface of Al/Aluminide thin films. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | chemically inert / interface / Al / Al_3Nb / aliminides / solid-phase reaction |
Paper # | CPM2013-46 |
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Committee | CPM |
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Conference Date | 2013/7/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Formation of chemically inert interface between Al and Al_3Nb thin films |
Sub Title (in English) | |
Keyword(1) | chemically inert |
Keyword(2) | interface |
Keyword(3) | Al |
Keyword(4) | Al_3Nb |
Keyword(5) | aliminides |
Keyword(6) | solid-phase reaction |
1st Author's Name | Atsushi NOYA |
1st Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology() |
2nd Author's Name | Mayumi B TAKEYAMA |
2nd Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology |
Date | 2013-08-01 |
Paper # | CPM2013-46 |
Volume (vol) | vol.113 |
Number (no) | 171 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |