Presentation 2013-08-01
Formation of chemically inert interface between Al and Al_3Nb thin films
Atsushi NOYA, Mayumi B TAKEYAMA,
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Abstract(in English) We propose a chemically inert interface, at which no solid-phase reaction takes place, between Al and an underlying aluminide thin film. We confirm validity of the proposed concept in the Al/Al_3Nb/SiO_2/Si system. We obtain Al(111) texture on the Al_3Nb(112) layer, and the Al/Al_3Nb interface is chemically inert without reaction at temperatures up to 750℃. We can demonstrate the chemically inert interface of Al/Aluminide thin films.
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Keyword(in English) chemically inert / interface / Al / Al_3Nb / aliminides / solid-phase reaction
Paper # CPM2013-46
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Conference Information
Committee CPM
Conference Date 2013/7/25(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation of chemically inert interface between Al and Al_3Nb thin films
Sub Title (in English)
Keyword(1) chemically inert
Keyword(2) interface
Keyword(3) Al
Keyword(4) Al_3Nb
Keyword(5) aliminides
Keyword(6) solid-phase reaction
1st Author's Name Atsushi NOYA
1st Author's Affiliation Faculty of Engineering, Kitami Institute of Technology()
2nd Author's Name Mayumi B TAKEYAMA
2nd Author's Affiliation Faculty of Engineering, Kitami Institute of Technology
Date 2013-08-01
Paper # CPM2013-46
Volume (vol) vol.113
Number (no) 171
Page pp.pp.-
#Pages 4
Date of Issue