Presentation | 2013-08-01 Formation Mechanism of Cubic-SiC by Carbonization of Si Surface Yukimune WATANABE, Kiichi KAMIMURA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | SiC materials for high-power devices and high-frequency devices are actively developed. In this study, we focus on a cubic(3C)-SiC that can be formed by the low temperature process, and we investigated to form high quality epitaxial films on Si substrate. A thin carbonized layer was formed on the Si substrate before the deposition of SiC to improve the quality of the SiC film. The formation mechanism of the carbonized layer greatly influences the crystal quality of the heteroepitaxial film. The carbonization conditions were carefully examined to clarify the formation mechanism of the carbonized layer. As the results, we found that the carbonized films formed by two different mechanisms. At the initial stage, the carbonized layer was formed epitaxially by the reaction of the Si element sublimed from the Si substrate and the carbon element decomposed form the hydrocarbon gas. Then the carbonized layer was grown by the reaction of the Si substrate and the carbon element diffused to the interface through the crystal defects of the carbonized layer. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Cubic-SiC / 3C-SiC / Wide Bandgap / Carbonization / Heteroepitaxial Growth |
Paper # | CPM2013-42 |
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Committee | CPM |
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Conference Date | 2013/7/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Formation Mechanism of Cubic-SiC by Carbonization of Si Surface |
Sub Title (in English) | |
Keyword(1) | Cubic-SiC |
Keyword(2) | 3C-SiC |
Keyword(3) | Wide Bandgap |
Keyword(4) | Carbonization |
Keyword(5) | Heteroepitaxial Growth |
1st Author's Name | Yukimune WATANABE |
1st Author's Affiliation | Interdisciplinary Graduate School of Science and Technology, Shinshu University() |
2nd Author's Name | Kiichi KAMIMURA |
2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University |
Date | 2013-08-01 |
Paper # | CPM2013-42 |
Volume (vol) | vol.113 |
Number (no) | 171 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |