Presentation 2013-08-01
Formation Mechanism of Cubic-SiC by Carbonization of Si Surface
Yukimune WATANABE, Kiichi KAMIMURA,
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Abstract(in English) SiC materials for high-power devices and high-frequency devices are actively developed. In this study, we focus on a cubic(3C)-SiC that can be formed by the low temperature process, and we investigated to form high quality epitaxial films on Si substrate. A thin carbonized layer was formed on the Si substrate before the deposition of SiC to improve the quality of the SiC film. The formation mechanism of the carbonized layer greatly influences the crystal quality of the heteroepitaxial film. The carbonization conditions were carefully examined to clarify the formation mechanism of the carbonized layer. As the results, we found that the carbonized films formed by two different mechanisms. At the initial stage, the carbonized layer was formed epitaxially by the reaction of the Si element sublimed from the Si substrate and the carbon element decomposed form the hydrocarbon gas. Then the carbonized layer was grown by the reaction of the Si substrate and the carbon element diffused to the interface through the crystal defects of the carbonized layer.
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Keyword(in English) Cubic-SiC / 3C-SiC / Wide Bandgap / Carbonization / Heteroepitaxial Growth
Paper # CPM2013-42
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Committee CPM
Conference Date 2013/7/25(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation Mechanism of Cubic-SiC by Carbonization of Si Surface
Sub Title (in English)
Keyword(1) Cubic-SiC
Keyword(2) 3C-SiC
Keyword(3) Wide Bandgap
Keyword(4) Carbonization
Keyword(5) Heteroepitaxial Growth
1st Author's Name Yukimune WATANABE
1st Author's Affiliation Interdisciplinary Graduate School of Science and Technology, Shinshu University()
2nd Author's Name Kiichi KAMIMURA
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
Date 2013-08-01
Paper # CPM2013-42
Volume (vol) vol.113
Number (no) 171
Page pp.pp.-
#Pages 4
Date of Issue