Presentation | 2013-08-01 Growth of (In)GaAsN thin films for Ultra High Efficiency Multi-Junction Solar Cells by Atomic Layer Epitaxy Hidetoshi Suzuki, Tomohiro Haraguchi, Toshihiro Yamauchi, Atsuhiko Fukuyama, Tetsuo Ikari, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | High quality GaAsN thin films were fabricated by atomic layer epitaxy (ALE). The effects of gas flow sequences on self-limiting mechanism (SLM), N incorporation, and residual impurities were investigated as a first step to grow GaAsN on precisely controlled surface by ALE. N precursor molecules were supplied to Ga (On-Ga) and As terminated surfaces (On-As). The On-As case showed rough surface and their crystal qualities were not good. In On-Ga case, SLM functioned well in whole growth temperature region and On-Ga sample showed low density of residual impurities. These demonstrated that On-Ga sequence is effective to grow GaAsN thin films on precisely controlled surface by ALE technique. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Multi-junction solar cells / dilute nitride / GaAsN / atomic layer epitaxy |
Paper # | CPM2013-41 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2013/7/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth of (In)GaAsN thin films for Ultra High Efficiency Multi-Junction Solar Cells by Atomic Layer Epitaxy |
Sub Title (in English) | |
Keyword(1) | Multi-junction solar cells |
Keyword(2) | dilute nitride |
Keyword(3) | GaAsN |
Keyword(4) | atomic layer epitaxy |
1st Author's Name | Hidetoshi Suzuki |
1st Author's Affiliation | IRO, University of Miyazaki() |
2nd Author's Name | Tomohiro Haraguchi |
2nd Author's Affiliation | Faculty of Engineering, University of Miyazaki |
3rd Author's Name | Toshihiro Yamauchi |
3rd Author's Affiliation | IRO, University of Miyazaki |
4th Author's Name | Atsuhiko Fukuyama |
4th Author's Affiliation | Faculty of Engineering, University of Miyazaki |
5th Author's Name | Tetsuo Ikari |
5th Author's Affiliation | Faculty of Engineering, University of Miyazaki |
Date | 2013-08-01 |
Paper # | CPM2013-41 |
Volume (vol) | vol.113 |
Number (no) | 171 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |