Presentation 2013-08-01
Growth of (In)GaAsN thin films for Ultra High Efficiency Multi-Junction Solar Cells by Atomic Layer Epitaxy
Hidetoshi Suzuki, Tomohiro Haraguchi, Toshihiro Yamauchi, Atsuhiko Fukuyama, Tetsuo Ikari,
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Abstract(in English) High quality GaAsN thin films were fabricated by atomic layer epitaxy (ALE). The effects of gas flow sequences on self-limiting mechanism (SLM), N incorporation, and residual impurities were investigated as a first step to grow GaAsN on precisely controlled surface by ALE. N precursor molecules were supplied to Ga (On-Ga) and As terminated surfaces (On-As). The On-As case showed rough surface and their crystal qualities were not good. In On-Ga case, SLM functioned well in whole growth temperature region and On-Ga sample showed low density of residual impurities. These demonstrated that On-Ga sequence is effective to grow GaAsN thin films on precisely controlled surface by ALE technique.
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Keyword(in English) Multi-junction solar cells / dilute nitride / GaAsN / atomic layer epitaxy
Paper # CPM2013-41
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Committee CPM
Conference Date 2013/7/25(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of (In)GaAsN thin films for Ultra High Efficiency Multi-Junction Solar Cells by Atomic Layer Epitaxy
Sub Title (in English)
Keyword(1) Multi-junction solar cells
Keyword(2) dilute nitride
Keyword(3) GaAsN
Keyword(4) atomic layer epitaxy
1st Author's Name Hidetoshi Suzuki
1st Author's Affiliation IRO, University of Miyazaki()
2nd Author's Name Tomohiro Haraguchi
2nd Author's Affiliation Faculty of Engineering, University of Miyazaki
3rd Author's Name Toshihiro Yamauchi
3rd Author's Affiliation IRO, University of Miyazaki
4th Author's Name Atsuhiko Fukuyama
4th Author's Affiliation Faculty of Engineering, University of Miyazaki
5th Author's Name Tetsuo Ikari
5th Author's Affiliation Faculty of Engineering, University of Miyazaki
Date 2013-08-01
Paper # CPM2013-41
Volume (vol) vol.113
Number (no) 171
Page pp.pp.-
#Pages 5
Date of Issue