Presentation 2013-08-01
GaAsN Solar Cell for Super High Efficient Multijunction Solar Cell
Kazuma IKEDA, Nobuaki KOJIMA, Yoshio OHSHITA, Masafumi YAMAGUCHI,
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Abstract(in English) The carrier mobility and lifetime of GaAsN which have been considered to be determined by N composition were improved by chemical beam epitaxy. The conversion efficiency of GaAsN solar cell was obtained to be 6.5%. The pseudo conversion efficiency was estimated to be 13.7% by Suns-Voc method. This method neglects the effect of the series resistance on the conversion efficiency. The high series resistance is considered to be caused by the configuration of the electrode. The optimization of the electrode can improve the efficiency. Further improvement can be possible by using pin structure, because the deterioration of the external quantum efficiency at long wavelength region was observed.
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Keyword(in English) GaAsN / Solar cell / Chemical beam epitaxy
Paper # CPM2013-40
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Conference Information
Committee CPM
Conference Date 2013/7/25(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GaAsN Solar Cell for Super High Efficient Multijunction Solar Cell
Sub Title (in English)
Keyword(1) GaAsN
Keyword(2) Solar cell
Keyword(3) Chemical beam epitaxy
1st Author's Name Kazuma IKEDA
1st Author's Affiliation Toyota Technological Institute()
2nd Author's Name Nobuaki KOJIMA
2nd Author's Affiliation Toyota Technological Institute
3rd Author's Name Yoshio OHSHITA
3rd Author's Affiliation Toyota Technological Institute
4th Author's Name Masafumi YAMAGUCHI
4th Author's Affiliation Toyota Technological Institute
Date 2013-08-01
Paper # CPM2013-40
Volume (vol) vol.113
Number (no) 171
Page pp.pp.-
#Pages 4
Date of Issue