Presentation 2013-10-24
A Class of q-Ary Unidirectional Error Correcting Codes for MLC NAND Flash Memories
Shohei KOTAKI, Masato KITAKAMI,
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Abstract(in English) Error correcting codes (ECCs) are essential techniques to ensure reliability of NAND Flash Memories. As typical error sources of NAND Flash memories, cell-to-cell interference and data retention are considered. The cell-to-cell interference, which occurs on a word unit, shifts threshold voltage distribution to the negative side. Also, the data retention, every cell suffers its effects, shifts the distribution to the positive side. Consequently, errors to only upper levels or to only lower levels are considered to be dominant in a page. Such errors are similar to unidirectional errors, thus they can be regarded as q-ary unidirectional errors. In this work, a new class of error correcting codes on which the q-ary unidirectional errors are considered is proposed. Evaluation results show that the proposed codes have less check bits than conventional BCH codes.
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Keyword(in English) NAND Flash memories / multi-level cell / error correcting codes / unidirectional errors / q-ary unidirectional errors
Paper # DC2013-25
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Committee DC
Conference Date 2013/10/17(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) A Class of q-Ary Unidirectional Error Correcting Codes for MLC NAND Flash Memories
Sub Title (in English)
Keyword(1) NAND Flash memories
Keyword(2) multi-level cell
Keyword(3) error correcting codes
Keyword(4) unidirectional errors
Keyword(5) q-ary unidirectional errors
1st Author's Name Shohei KOTAKI
1st Author's Affiliation Graduate school of Advaced Interation Science,Chiba University()
2nd Author's Name Masato KITAKAMI
2nd Author's Affiliation Graduate school of Advaced Interation Science,Chiba University
Date 2013-10-24
Paper # DC2013-25
Volume (vol) vol.113
Number (no) 270
Page pp.pp.-
#Pages 6
Date of Issue