| Presentation | 2013-06-21 Effect of N_2O doping on the properties of ZnO thin films grown using high-energy H_2O generated by a catalytic reaction Naoya YAMAGUCHI, Yuuki OOHASHI, Eichi NAGATOMI, Yasuhiro TAMAYAMA, Takahiro KATO, Kanji YASUI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | ZnO films were grown using a reaction between an alkylzinc (DMZn) gas and high-energy H_2O, the latter is generated by a Pt-catalyzed exothermic H_2-O_2 reaction. During the film growth, N_2O gas was added in the reaction zone. In this study, the influence of the N_2O gas supply during the film growth on the properties of the ZnO films was investigated. The ZnO epitaxial films were directly grown on a-Al_2O_3 substrates at a substrate temperature of 773K for 60 min without any buffer layer. Although all films showed an n-type character, the electron mobility of N_2O doped (3.2×10^<-3> Pa) film at RT (290 K) was 234cm^2/Vs, while that of non-doped ZnO film was 207cm^2/Vs. The mobility of the N_2O doped film (234 cm^2/Vs at RT) increases to 1100 cm^2/Vs at 100 K. Electron concentrations at RT of all films were 4-6×10^<16>cm^<-3>. It was considered that a part of the nitrogen acceptor compensated the donor impurities and the intrinsic donor impurities caused by the defects were also reduced by the nitrogen atoms in view of the small electron concentration and the large electron mobility for N_2O doped ZnO films. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ZnO / catalytic reaction / high-energy H_2O / N_2O dope / Hall mobility / PL spectra |
| Paper # | EMD2013-22,CPM2013-37,OME2013-45 |
| Date of Issue |
| Conference Information | |
| Committee | EMD |
|---|---|
| Conference Date | 2013/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electromechanical Devices (EMD) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of N_2O doping on the properties of ZnO thin films grown using high-energy H_2O generated by a catalytic reaction |
| Sub Title (in English) | |
| Keyword(1) | ZnO |
| Keyword(2) | catalytic reaction |
| Keyword(3) | high-energy H_2O |
| Keyword(4) | N_2O dope |
| Keyword(5) | Hall mobility |
| Keyword(6) | PL spectra |
| 1st Author's Name | Naoya YAMAGUCHI |
| 1st Author's Affiliation | Faculty of Engineering Nagaoka University of Technology() |
| 2nd Author's Name | Yuuki OOHASHI |
| 2nd Author's Affiliation | Faculty of Engineering Nagaoka University of Technology |
| 3rd Author's Name | Eichi NAGATOMI |
| 3rd Author's Affiliation | Faculty of Engineering Nagaoka University of Technology |
| 4th Author's Name | Yasuhiro TAMAYAMA |
| 4th Author's Affiliation | Faculty of Engineering Nagaoka University of Technology |
| 5th Author's Name | Takahiro KATO |
| 5th Author's Affiliation | Faculty of Engineering Nagaoka University of Technology |
| 6th Author's Name | Kanji YASUI |
| 6th Author's Affiliation | Faculty of Engineering Nagaoka University of Technology |
| Date | 2013-06-21 |
| Paper # | EMD2013-22,CPM2013-37,OME2013-45 |
| Volume (vol) | vol.113 |
| Number (no) | 96 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |